Dynamic control of photoresponse in ZnO-based thin-film transistors in the visible spectrum

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.issueNumber2en_US
dc.citation.volumeNumber5en_US
dc.contributor.authorAygun, L. E.en_US
dc.contributor.authorOruc, F. B.en_US
dc.contributor.authorAtar, F. B.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2016-02-08T09:39:53Z
dc.date.available2016-02-08T09:39:53Z
dc.date.issued2013-04en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe present ZnO-channel thin-film transistors with actively tunable photocurrent in the visible spectrum, although ZnO band edge is in the ultraviolet. ZnO channel is deposited by atomic layer deposition technique at a low temperature (80), which is known to introduce deep level traps within the forbidden band of ZnO. The gate bias dynamically modifies the occupancy probability of these trap states by controlling the depletion region in the ZnO channel. Unoccupied trap states enable the absorption of the photons with lower energies than the bandgap of ZnO. Photoresponse to visible light is controlled by the applied voltage bias at the gate terminal. © 2009-2012 IEEE.en_US
dc.identifier.doi10.1109/JPHOT.2013.2250274en_US
dc.identifier.issn1943-0655
dc.identifier.urihttp://hdl.handle.net/11693/21027
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JPHOT.2013.2250274en_US
dc.source.titleIEEE Photonics Journalen_US
dc.subjectDefectsen_US
dc.subjectMetal oxideen_US
dc.subjectOptoelectronic materialsen_US
dc.subjectOxide materialsen_US
dc.subjectPhototransistoren_US
dc.subjectTFTen_US
dc.subjectTransparent oxideen_US
dc.subjectTrapsen_US
dc.subjectTunableen_US
dc.subjectVisibleen_US
dc.subjectMetal oxidesen_US
dc.subjectOpto-electronic materialsen_US
dc.titleDynamic control of photoresponse in ZnO-based thin-film transistors in the visible spectrumen_US
dc.typeArticleen_US

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