Low temperature atomic layer deposited ZnO photo thin film transistors

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.authorOkyay, Ali Kemal
dc.citation.issueNumber1en_US
dc.citation.volumeNumber33en_US
dc.contributor.authorOruc, F. B.en_US
dc.contributor.authorAygun, L. E.en_US
dc.contributor.authorDonmez, I.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorYu, H. Y.en_US
dc.date.accessioned2016-02-08T11:00:37Z
dc.date.available2016-02-08T11:00:37Z
dc.date.issued2014en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250°C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80°C; Ion/Ioff ratio is extracted as 7.8 × 109 and subthreshold slope is extracted as 0.116 V/dec. Flexible ZnO TFT devices are also fabricated using films grown at 80°C. ID-VGS characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias. © 2014 American Vacuum Society.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:00:37Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2014en
dc.identifier.doi10.1116/1.4892939en_US
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/11693/26492
dc.language.isoEnglishen_US
dc.publisherAVS Science and Technology Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.4892939en_US
dc.source.titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_US
dc.subjectAtomic layer depositionen_US
dc.subjectFabricationen_US
dc.subjectGrowth temperatureen_US
dc.subjectMetallic filmsen_US
dc.subjectSiliconen_US
dc.subjectThin film transistorsen_US
dc.subjectX ray diffractionen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectAtomic layer depositeden_US
dc.subjectDifferent substratesen_US
dc.subjectElectrical characteristicen_US
dc.subjectLow temperaturesen_US
dc.subjectMaterial characteristicsen_US
dc.subjectSubthreshold slopeen_US
dc.subjectVisible light absorptionen_US
dc.subjectX-ray diffraction methoden_US
dc.subjectZinc oxideen_US
dc.titleLow temperature atomic layer deposited ZnO photo thin film transistorsen_US
dc.typeArticleen_US

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