Improved Tmax estimation in GaN HEMTs using an equivalent hot point approximation

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buir.contributor.authorOdabaşı, Oğuz
buir.contributor.authorAkar, Mehmet Ömer
buir.contributor.authorBütün, Bayram
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage1559en_US
dc.citation.issueNumber4en_US
dc.citation.spage1553en_US
dc.citation.volumeNumber67en_US
dc.contributor.authorOdabaşı, Oğuz
dc.contributor.authorAkar, Mehmet Ömer
dc.contributor.authorBütün, Bayram
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2021-02-18T10:03:15Z
dc.date.available2021-02-18T10:03:15Z
dc.date.issued2020
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this article, heat generation distribution and maximum device temperature of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) are investigated by using the 2-D electrothermal and finite-element method (FEM) simulations. Devices with different gate lengths and source-to-drain spacing are investigated. It is observed that the maximum device temperature (TMAX) depends on the drain-to-source spacing and is almost independent of the gate length and that the assumption of a uniform heat generation region, under the gate, is not accurate; this is contrary to conventional calculation methods. Moreover, based on the results, a new approximation is proposed to use in the FEM simulations that can estimate TMAX more accurately. This method does not require physics-based technology computer-aided design (TCAD) simulations and can work with a low mesh density. The performance is compared with prior methods.en_US
dc.description.sponsorshipThis work was supported by Turkish Scientific and Technological Research Council, TUBITAK, under 1501 project GaNTURK. The work of Ekmel Özbay was supported in part by the Turkish Academy of Sciences.en_US
dc.identifier.doi10.1109/TED.2020.2976030en_US
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/11693/75440
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://dx.doi.org/10.1109/TED.2020.2976030en_US
dc.source.titleIEEE Transactions on Electron Devicesen_US
dc.subject2-D device simulationsen_US
dc.subjectAlGaNen_US
dc.subjectChannel temperatureen_US
dc.subjectFinite-element analysisen_US
dc.subjectGallium nitride (GaN)en_US
dc.subjectHigh-electron-mobility transistors (HEMTs)en_US
dc.subjectHot pointen_US
dc.subjectSelfheatingen_US
dc.subjectTechnology computer-aided design (TCAD)en_US
dc.subjectThermal analysisen_US
dc.subjectThermal resistanceen_US
dc.titleImproved Tmax estimation in GaN HEMTs using an equivalent hot point approximationen_US
dc.typeArticleen_US

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