All-silicon ultra-broadband infrared light absorbers

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage7en_US
dc.citation.issueNumber38589en_US
dc.citation.spage1en_US
dc.citation.volumeNumber6en_US
dc.contributor.authorGorgulu, K.en_US
dc.contributor.authorGok, A.en_US
dc.contributor.authorYilmaz, M.en_US
dc.contributor.authorTopalli, K.en_US
dc.contributor.authorBlylkll, N.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2018-04-12T10:48:48Z
dc.date.available2018-04-12T10:48:48Z
dc.date.issued2016en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractAbsorbing infrared radiation efficiently is important for critical applications such as thermal imaging and infrared spectroscopy. Common infrared absorbing materials are not standard in Si VLSI technology. We demonstrate ultra-broadband mid-infrared absorbers based purely on silicon. Broadband absorption is achieved by the combined effects of free carrier absorption, and vibrational and plasmonic absorption resonances. The absorbers, consisting of periodically arranged silicon gratings, can be fabricated using standard optical lithography and deep reactive ion etching techniques, allowing for cost-effective and wafer-scale fabrication of micro-structures. Absorption wavebands in excess of 15 micrometers (5-20 μm) are demonstrated with more than 90% average absorptivity. The structures also exhibit broadband absorption performance even at large angles of incidence (θ = 50°), and independent of polarization.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T10:48:48Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2016en
dc.identifier.doi10.1038/srep38589en_US
dc.identifier.eissn2045-2322en_US
dc.identifier.urihttp://hdl.handle.net/11693/36693
dc.language.isoEnglishen_US
dc.publisherNature Publishing Groupen_US
dc.relation.isversionofhttp://dx.doi.org/10.1038/srep38589en_US
dc.source.titleScientific Reportsen_US
dc.subjectMetamaterialsen_US
dc.subjectNanophotonics and plasmonicsen_US
dc.titleAll-silicon ultra-broadband infrared light absorbersen_US
dc.typeArticleen_US

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