Broadband terahertz modulators using self-gated graphene capacitors
dc.citation.epage | 1866 | en_US |
dc.citation.issueNumber | 9 | en_US |
dc.citation.spage | 1861 | en_US |
dc.citation.volumeNumber | 32 | en_US |
dc.contributor.author | Kakenov, N. | en_US |
dc.contributor.author | Balci, O. | en_US |
dc.contributor.author | Polat, E. O. | en_US |
dc.contributor.author | Altan, H. | en_US |
dc.contributor.author | Kocabas, C. | en_US |
dc.date.accessioned | 2016-02-08T10:15:34Z | |
dc.date.available | 2016-02-08T10:15:34Z | |
dc.date.issued | 2015 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | We demonstrate a terahertz intensity modulator using a graphene supercapacitor which consists of two large-area graphene electrodes and an electrolyte medium. The mutual electrolyte gating between the graphene electrodes provides very efficient electrostatic doping with Fermi energies of 1 eV and a charge density of 8 × 1013 cm-2. We show that the graphene supercapacitor yields more than 50% modulation between 0.1 and 1.4 THz with operation voltages less than 3 V. The low insertion losses, high modulation depth over a broad spectrum, and the simplicity of the device structure are the key attributes of graphene supercapacitors for THz applications. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:15:34Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2015 | en |
dc.identifier.doi | 10.1364/JOSAB.32.001861 | en_US |
dc.identifier.issn | 0740-3224 | |
dc.identifier.uri | http://hdl.handle.net/11693/23547 | |
dc.language.iso | English | en_US |
dc.publisher | Optical Society of America | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1364/JOSAB.32.001861 | en_US |
dc.source.title | Journal of the Optical Society of America B: Optical Physics | en_US |
dc.subject | Capacitors | en_US |
dc.subject | Electrodes | en_US |
dc.subject | Electrolytes | en_US |
dc.subject | Graphene | en_US |
dc.subject | Graphite electrodes | en_US |
dc.subject | Modulation | en_US |
dc.subject | Modulators | en_US |
dc.subject | Broadband terahertz | en_US |
dc.subject | Electrostatic doping | en_US |
dc.subject | Graphene electrodes | en_US |
dc.subject | Intensity modulators | en_US |
dc.subject | Large-area graphene | en_US |
dc.subject | Low insertion loss | en_US |
dc.subject | Modulation depth | en_US |
dc.subject | Operation voltage | en_US |
dc.subject | Electrolytic capacitors | en_US |
dc.title | Broadband terahertz modulators using self-gated graphene capacitors | en_US |
dc.type | Article | en_US |
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