Broadband terahertz modulators using self-gated graphene capacitors

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dc.citation.epage1866en_US
dc.citation.issueNumber9en_US
dc.citation.spage1861en_US
dc.citation.volumeNumber32en_US
dc.contributor.authorKakenov, N.en_US
dc.contributor.authorBalci, O.en_US
dc.contributor.authorPolat, E. O.en_US
dc.contributor.authorAltan, H.en_US
dc.contributor.authorKocabas, C.en_US
dc.date.accessioned2016-02-08T10:15:34Z
dc.date.available2016-02-08T10:15:34Z
dc.date.issued2015en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe demonstrate a terahertz intensity modulator using a graphene supercapacitor which consists of two large-area graphene electrodes and an electrolyte medium. The mutual electrolyte gating between the graphene electrodes provides very efficient electrostatic doping with Fermi energies of 1 eV and a charge density of 8 × 1013 cm-2. We show that the graphene supercapacitor yields more than 50% modulation between 0.1 and 1.4 THz with operation voltages less than 3 V. The low insertion losses, high modulation depth over a broad spectrum, and the simplicity of the device structure are the key attributes of graphene supercapacitors for THz applications.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:15:34Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2015en
dc.identifier.doi10.1364/JOSAB.32.001861en_US
dc.identifier.issn0740-3224
dc.identifier.urihttp://hdl.handle.net/11693/23547
dc.language.isoEnglishen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/JOSAB.32.001861en_US
dc.source.titleJournal of the Optical Society of America B: Optical Physicsen_US
dc.subjectCapacitorsen_US
dc.subjectElectrodesen_US
dc.subjectElectrolytesen_US
dc.subjectGrapheneen_US
dc.subjectGraphite electrodesen_US
dc.subjectModulationen_US
dc.subjectModulatorsen_US
dc.subjectBroadband terahertzen_US
dc.subjectElectrostatic dopingen_US
dc.subjectGraphene electrodesen_US
dc.subjectIntensity modulatorsen_US
dc.subjectLarge-area grapheneen_US
dc.subjectLow insertion lossen_US
dc.subjectModulation depthen_US
dc.subjectOperation voltageen_US
dc.subjectElectrolytic capacitorsen_US
dc.titleBroadband terahertz modulators using self-gated graphene capacitorsen_US
dc.typeArticleen_US

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