PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs

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buir.contributor.authorSheremet, ‪Volodymyr
buir.contributor.authorGülseren, Oğuz
dc.citation.epage112800O-6en_US
dc.citation.spage112800O-1en_US
dc.citation.volumeNumber11280en_US
dc.contributor.authorGenç, M.
dc.contributor.authorSheremet, ‪Volodymyr
dc.contributor.authorAltuntaş, İ.
dc.contributor.authorDemir, İ.
dc.contributor.authorGür, E.
dc.contributor.authorElagöz, S.
dc.contributor.authorGülseren, Oğuz
dc.contributor.authorÖzgür, Ü.
dc.contributor.authorAvrutin, V.
dc.contributor.authorMorkoç, H.
dc.contributor.authorAydınlı, A.
dc.contributor.editorFujioka, H.
dc.contributor.editorMorkoç, H.
dc.contributor.editorSchwarz, U. T.
dc.coverage.spatialSan Francisco, California, United Statesen_US
dc.date.accessioned2021-03-04T05:21:06Z
dc.date.available2021-03-04T05:21:06Z
dc.date.issued2020
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.descriptionDate of Conference: 1-6 February 2020en_US
dc.descriptionConference Name: SPIE OPTO, 2020: Gallium Nitride Materials and Devices XV 2020en_US
dc.description.abstractIn this work, the effect of introducing a photonic crystal network of silicon nitride (SiN) micro-domes on the backside of silver coated gallium nitride (GaN) based light emitting diodes (LEDs) was studied. First, sapphire side of the top emitting LEDs, which is the bottom surface of the LEDs, is coated with silver (Ag). Light emitted towards the sapphire substrate is reflected upwards to the top surface and the amount of light extracted from the LED is expected to increase. In an alternative approach, SiN micro-domes forming a two dimensional photonic crystal, 2 μm in diameter and 80 nm in height in average, are deposited on the light emitting surface of the device with a period of 2 μm. Coating the backside with Ag has increased the efficiency of a top emitting LED by 11%. By introducing the SiN photonic crystal onto the Ag backside coated sample, total internal reflection is reduced via scattering and the amount of light emitted has been increased by 30% at 5·104 mA/cm2. Integration of SiN micro-domes with Ag coating has significantly impacted light extraction which has been shown to increase the efficiency of GaN based LEDs. Fabrication process and the results are discussed in detail.en_US
dc.identifier.doi10.1117/12.2547206en_US
dc.identifier.isbn9781510633230
dc.identifier.issn0277-786X
dc.identifier.urihttp://hdl.handle.net/11693/75744
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttps://dx.doi.org/10.1117/12.2547206en_US
dc.source.titleProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.subjectLight extractionen_US
dc.subjectSi3N4 micro-domesen_US
dc.subjectLED performanceen_US
dc.subjectLight emitting diodesen_US
dc.titlePECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDsen_US
dc.typeConference Paperen_US

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Institute of Materials Science and Nanotechnology (UNAM)