Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared
buir.contributor.author | Aydınlı, Atilla | |
dc.citation.volumeNumber | 8704 | en_US |
dc.contributor.author | Tansel, T. | en_US |
dc.contributor.author | Kutluer, K. | en_US |
dc.contributor.author | Muti, Abdullah | en_US |
dc.contributor.author | Salihoğlu, Ömer | en_US |
dc.contributor.author | Aydınlı, Atilla | en_US |
dc.contributor.author | Turan, R. | en_US |
dc.coverage.spatial | Baltimore, Maryland, United States | en_US |
dc.date.accessioned | 2016-02-08T12:07:11Z | |
dc.date.available | 2016-02-08T12:07:11Z | |
dc.date.issued | 2013 | en_US |
dc.department | Department of Physics | en_US |
dc.description | Date of Conference: 29 April–3 May 2013 | en_US |
dc.description | Conference name: Proceedings of SPIE,Infrared Technology and Applications XXXIX | en_US |
dc.description.abstract | We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise measurements exhibited a frequency dependent plateau (i.e. 1/f-noise characteristic) for unpassivated as well as Si3N4 passivated samples whereas 1/f-type low noise suppression (i.e. frequency independent plateau) with a noise current reduction of more than one order of magnitude was observed for SiO2 passivation. For reverse bias values below -0.15V, the classical Schottky-noise calculation alone did not appear to describe the noise mechanism in a SL noise behavior, which shows a divergence between theoretically and experimentally determined noise values. We identify that, the additional noise appears, with and without passivation, at the surface activation energy of < 60 meV and is inversely proportional to the reverse bias. This is believed to be caused by the surface dangling-bonds (as well as surface states) whose response is controlled by the applied reverse bias. The calculated noise characteristics showed a good agreement with the experimental data. © 2013 SPIE. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T12:07:11Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013 | en |
dc.identifier.doi | 10.1117/12.2016388 | en_US |
dc.identifier.uri | http://hdl.handle.net/11693/27975 | |
dc.language.iso | English | en_US |
dc.publisher | SPIE | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1117/12.2016388 | en_US |
dc.source.title | Proceedings of SPIE | en_US |
dc.subject | InAs/GaSb | en_US |
dc.subject | Mid-Wave-Infrared Photodiode | en_US |
dc.subject | Noise Characterization | en_US |
dc.subject | Passivation | en_US |
dc.subject | surface activation energy | en_US |
dc.subject | Frequency independent | en_US |
dc.subject | InAs/GaSb | en_US |
dc.subject | InAs/GaSb superlattices | en_US |
dc.subject | Mid wave infrared (MWIR) | en_US |
dc.subject | Mid-wave-infrared photodiodes | en_US |
dc.subject | Noise characterization | en_US |
dc.subject | Passivation materials | en_US |
dc.subject | Surface activation | en_US |
dc.subject | Activation energy | en_US |
dc.subject | Dangling bonds | en_US |
dc.subject | Indium antimonides | en_US |
dc.subject | Infrared radiation | en_US |
dc.subject | Photodiodes | en_US |
dc.subject | Superlattices | en_US |
dc.subject | Passivation | en_US |
dc.title | Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared | en_US |
dc.type | Conference Paper | en_US |
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