Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared

dc.citation.volumeNumber8704en_US
dc.contributor.authorTansel, T.en_US
dc.contributor.authorKutluer, K.en_US
dc.contributor.authorMuti, Abdullahen_US
dc.contributor.authorSalihoğlu, Ömeren_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorTuran, R.en_US
dc.contributor.bilkentauthorAydınlı, Atilla
dc.coverage.spatialBaltimore, Maryland, United Statesen_US
dc.date.accessioned2016-02-08T12:07:11Z
dc.date.available2016-02-08T12:07:11Z
dc.date.issued2013en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 29 April–3 May 2013en_US
dc.descriptionConference name: Proceedings of SPIE,Infrared Technology and Applications XXXIXen_US
dc.description.abstractWe describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise measurements exhibited a frequency dependent plateau (i.e. 1/f-noise characteristic) for unpassivated as well as Si3N4 passivated samples whereas 1/f-type low noise suppression (i.e. frequency independent plateau) with a noise current reduction of more than one order of magnitude was observed for SiO2 passivation. For reverse bias values below -0.15V, the classical Schottky-noise calculation alone did not appear to describe the noise mechanism in a SL noise behavior, which shows a divergence between theoretically and experimentally determined noise values. We identify that, the additional noise appears, with and without passivation, at the surface activation energy of < 60 meV and is inversely proportional to the reverse bias. This is believed to be caused by the surface dangling-bonds (as well as surface states) whose response is controlled by the applied reverse bias. The calculated noise characteristics showed a good agreement with the experimental data. © 2013 SPIE.en_US
dc.identifier.doi10.1117/12.2016388en_US
dc.identifier.urihttp://hdl.handle.net/11693/27975
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.2016388en_US
dc.source.titleProceedings of SPIEen_US
dc.subjectInAs/GaSben_US
dc.subjectMid-Wave-Infrared Photodiodeen_US
dc.subjectNoise Characterizationen_US
dc.subjectPassivationen_US
dc.subjectsurface activation energyen_US
dc.subjectFrequency independenten_US
dc.subjectInAs/GaSben_US
dc.subjectInAs/GaSb superlatticesen_US
dc.subjectMid wave infrared (MWIR)en_US
dc.subjectMid-wave-infrared photodiodesen_US
dc.subjectNoise characterizationen_US
dc.subjectPassivation materialsen_US
dc.subjectSurface activationen_US
dc.subjectActivation energyen_US
dc.subjectDangling bondsen_US
dc.subjectIndium antimonidesen_US
dc.subjectInfrared radiationen_US
dc.subjectPhotodiodesen_US
dc.subjectSuperlatticesen_US
dc.subjectPassivationen_US
dc.titleLow-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrareden_US
dc.typeConference Paperen_US
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Low-frequency noise behavior at reverse bias region in InAs GaSb superlattice photodiodes on mid-wave infrared.pdf
Size:
779.91 KB
Format:
Adobe Portable Document Format
Description:
Full printable version