Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared

Date
2013
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Source Title
Proceedings of SPIE
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Publisher
SPIE
Volume
8704
Issue
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Language
English
Type
Conference Paper
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Abstract

We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise measurements exhibited a frequency dependent plateau (i.e. 1/f-noise characteristic) for unpassivated as well as Si3N4 passivated samples whereas 1/f-type low noise suppression (i.e. frequency independent plateau) with a noise current reduction of more than one order of magnitude was observed for SiO2 passivation. For reverse bias values below -0.15V, the classical Schottky-noise calculation alone did not appear to describe the noise mechanism in a SL noise behavior, which shows a divergence between theoretically and experimentally determined noise values. We identify that, the additional noise appears, with and without passivation, at the surface activation energy of < 60 meV and is inversely proportional to the reverse bias. This is believed to be caused by the surface dangling-bonds (as well as surface states) whose response is controlled by the applied reverse bias. The calculated noise characteristics showed a good agreement with the experimental data. © 2013 SPIE.

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Keywords
InAs/GaSb, Mid-Wave-Infrared Photodiode, Noise Characterization, Passivation, surface activation energy, Frequency independent, InAs/GaSb, InAs/GaSb superlattices, Mid wave infrared (MWIR), Mid-wave-infrared photodiodes, Noise characterization, Passivation materials, Surface activation, Activation energy, Dangling bonds, Indium antimonides, Infrared radiation, Photodiodes, Superlattices, Passivation
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Published Version (Please cite this version)