Analysis of strain fields in silicon nanocrystals
dc.citation.epage | 191914-3 | en_US |
dc.citation.issueNumber | 19 | en_US |
dc.citation.spage | 191914-1 | en_US |
dc.citation.volumeNumber | 94 | en_US |
dc.contributor.author | Yilmaz, D. E. | en_US |
dc.contributor.author | Bulutay, C. | en_US |
dc.contributor.author | Çaǧın, T. | en_US |
dc.date.accessioned | 2016-02-08T10:03:54Z | |
dc.date.available | 2016-02-08T10:03:54Z | |
dc.date.issued | 2009 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 Å distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:03:54Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2009 | en |
dc.identifier.doi | 10.1063/1.3138163 | en_US |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/11693/22720 | |
dc.language.iso | English | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.3138163 | en_US |
dc.source.title | Applied Physics Letters | en_US |
dc.subject | Amorphous silicon dioxide | en_US |
dc.subject | Matrix | en_US |
dc.subject | Nanocrystal surface | en_US |
dc.subject | Nonuniform | en_US |
dc.subject | Optical and electronic properties | en_US |
dc.subject | Silicon nanocrystals | en_US |
dc.subject | Strain analysis | en_US |
dc.subject | Strain distributions | en_US |
dc.subject | Strain fields | en_US |
dc.subject | Strain profiles | en_US |
dc.subject | Volumetric strain | en_US |
dc.subject | Electronic properties | en_US |
dc.subject | Nanocrystals | en_US |
dc.subject | Semiconductor quantum dots | en_US |
dc.subject | Silica | en_US |
dc.subject | Amorphous silicon | en_US |
dc.title | Analysis of strain fields in silicon nanocrystals | en_US |
dc.type | Article | en_US |
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