Analysis of strain fields in silicon nanocrystals
Date
2009
Authors
Yilmaz, D. E.
Bulutay, C.
Çaǧın, T.
Advisor
Instructor
Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
Publisher
American Institute of Physics
Volume
94
Issue
19
Pages
191914-1 - 191914-3
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract
Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 Å distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.
Course
Other identifiers
Book Title
Keywords
Amorphous silicon dioxide, Matrix, Nanocrystal surface, Nonuniform, Optical and electronic properties, Silicon nanocrystals, Strain analysis, Strain distributions, Strain fields, Strain profiles, Volumetric strain, Electronic properties, Nanocrystals, Semiconductor quantum dots, Silica, Amorphous silicon