Analysis of strain fields in silicon nanocrystals
Date
2009
Authors
Yilmaz, D. E.
Bulutay, C.
Çaǧın, T.
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
BUIR Usage Stats
3
views
views
17
downloads
downloads
Citation Stats
Series
Abstract
Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 Å distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.
Source Title
Applied Physics Letters
Publisher
American Institute of Physics
Course
Other identifiers
Book Title
Keywords
Amorphous silicon dioxide, Matrix, Nanocrystal surface, Nonuniform, Optical and electronic properties, Silicon nanocrystals, Strain analysis, Strain distributions, Strain fields, Strain profiles, Volumetric strain, Electronic properties, Nanocrystals, Semiconductor quantum dots, Silica, Amorphous silicon
Degree Discipline
Degree Level
Degree Name
Citation
Permalink
Published Version (Please cite this version)
Collections
Language
English