Formation of Ge nanocrystals and SiGe in PECVD grown SiNx: Ge thin films

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage852en_US
dc.citation.issueNumber4-5en_US
dc.citation.spage848en_US
dc.citation.volumeNumber9en_US
dc.contributor.authorDana, A.en_US
dc.contributor.authorTokay, S.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2016-02-08T10:18:39Z
dc.date.available2016-02-08T10:18:39Z
dc.date.issued2006en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractFormation of Ge nanocrystals in SiNx matrices has been studied using plasma enhanced chemical vapor deposition in both as deposited samples as well as in post-vacuum annealed samples. Low temperature and short duration anneals in vacuum resulted in Ge nanocrystals whereas prolonged anneals at higher temperatures resulted in Ge nanocrystals accompanied with SiGe formation at the SiNx/Si interface. Raman Scattering Spectroscopy was extensively used to track the formation of various phonon modes during the diffusion of Ge through SiNx and into the Si substrate.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:18:39Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2006en
dc.identifier.doi10.1016/j.mssp.2006.08.073en_US
dc.identifier.eissn1873-4081
dc.identifier.issn1369-8001
dc.identifier.urihttp://hdl.handle.net/11693/23754
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.mssp.2006.08.073en_US
dc.source.titleMaterials Science in Semiconductor Processingen_US
dc.subjectGe nanocrystalsen_US
dc.subjectRaman scattering spectroscopyen_US
dc.subjectAnnealingen_US
dc.subjectGermaniumen_US
dc.subjectPhononsen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectRaman scatteringen_US
dc.subjectGe nanocrystalsen_US
dc.subjectPhonon modesen_US
dc.subjectPost-vacuum annealingen_US
dc.subjectNanostructured materialsen_US
dc.titleFormation of Ge nanocrystals and SiGe in PECVD grown SiNx: Ge thin filmsen_US
dc.typeArticleen_US

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