High power K-band GaN on SiC CPW monolithic power amplifier
Date
2014-10
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Source Title
European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
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Publisher
IEEE
Volume
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Pages
1492 - 1495
Language
English
Type
Conference Paper
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Abstract
This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.
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Keywords
AlGaN/GaN, HEMTs, MMIC power amplifier, Radiation, Space, Amplifiers (electronic), Frequency bands, Gallium nitride, Heat radiation, Microwave amplifiers, Silicon carbide, High power amplifier, MMIC amplifiers, Radiation hardness, Small signal gain, Power amplifiers