High power K-band GaN on SiC CPW monolithic power amplifier

Date
2014-10
Advisor
Instructor
Source Title
European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
Print ISSN
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
1492 - 1495
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Abstract

This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.

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Keywords
AlGaN/GaN, HEMTs, MMIC power amplifier, Radiation, Space, Amplifiers (electronic), Frequency bands, Gallium nitride, Heat radiation, Microwave amplifiers, Silicon carbide, High power amplifier, MMIC amplifiers, Radiation hardness, Small signal gain, Power amplifiers
Citation
Published Version (Please cite this version)