High power K-band GaN on SiC CPW monolithic power amplifier

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High Power K-band GaN on SiC CPW Monolithic.pdf (683.42 KB)

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2014-10

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Abstract

This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.

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European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference

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IEEE

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AlGaN/GaN, HEMTs, MMIC power amplifier, Radiation, Space, Amplifiers (electronic), Frequency bands, Gallium nitride, Heat radiation, Microwave amplifiers, Silicon carbide, High power amplifier, MMIC amplifiers, Radiation hardness, Small signal gain, Power amplifiers

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http://hdl.handle.net/11693/27619

Published Version (Please cite this version)

http://dx.doi.org/10.1109/EuMC.2014.6986731

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Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - NANOTAM
Scholarly Publications - Physics
Scholarly Publications - UNAM

Language

English

Type

Conference Paper