Publication:
High power K-band GaN on SiC CPW monolithic power amplifier

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High Power K-band GaN on SiC CPW Monolithic.pdf (683.42 KB)

Date

2014-10

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IEEE

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Abstract

This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.

Description

Date of Conference: 6-9 Oct. 2014
Conference name: 44th European Microwave Conference, 2014

Keywords

AlGaN/GaN, HEMTs, MMIC power amplifier, Radiation, Space, Amplifiers (electronic), Frequency bands, Gallium nitride, Heat radiation, Microwave amplifiers, Silicon carbide, High power amplifier, MMIC amplifiers, Radiation hardness, Small signal gain, Power amplifiers

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http://hdl.handle.net/11693/27619

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Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - NANOTAM
Scholarly Publications - Physics
Scholarly Publications - UNAM