In-volume laser direct writing of silicon—challenges and opportunities

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buir.contributor.authorOnur, Tokel
buir.contributor.authorİlday, Fatih Ömer
buir.contributor.orcidOnur, Tokel|0000-0003-1586-4349
buir.contributor.orcidİlday, Fatih Ömer|0000-0002-9057-5371
dc.citation.epage2100140-35en_US
dc.citation.issueNumber11en_US
dc.citation.spage2100140-1en_US
dc.citation.volumeNumber5en_US
dc.contributor.authorChambonneau, M.
dc.contributor.authorGrojo, D
dc.contributor.authorOnur, Tokel
dc.contributor.authorİlday, Fatih Ömer
dc.contributor.authorTzortzakis, S.
dc.contributor.authorNolte, S.
dc.date.accessioned2022-02-17T13:44:06Z
dc.date.available2022-02-17T13:44:06Z
dc.date.issued2021-11
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractLaser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond-pulse trains, and surface-seeded bulk modifications have allowed addressing numerous applications.en_US
dc.embargo.release2022-11-30
dc.identifier.doi10.1002/lpor.202100140en_US
dc.identifier.eissn1863-8899
dc.identifier.issn1863-8880
dc.identifier.urihttp://hdl.handle.net/11693/77478
dc.language.isoEnglishen_US
dc.publisherWiley-VCH Verlag GmbH & Co. KGaAen_US
dc.relation.isversionofhttps://doi.org/10.1002/lpor.202100140en_US
dc.source.titleLaser & Photonics Reviewsen_US
dc.titleIn-volume laser direct writing of silicon—challenges and opportunitiesen_US
dc.typeReviewen_US

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Institute of Materials Science and Nanotechnology (UNAM)