Enhanced light scattering with energy downshifting using 16 nm indium nitride nanoparticles for improved thin-film a-Si N-i-P solar cells

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage16en_US
dc.citation.spage9en_US
dc.contributor.authorChowdhury F.I.en_US
dc.contributor.authorİslam, K.en_US
dc.contributor.authorAlkış, Sabrien_US
dc.contributor.authorOrtaç, Bülenden_US
dc.contributor.authorAlevli, Mustafaen_US
dc.contributor.authorDietz, N.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorNayfeh, A.en_US
dc.coverage.spatialChicago Illinois, US
dc.date.accessioned2016-02-08T12:15:06Z
dc.date.available2016-02-08T12:15:06Z
dc.date.issued2015-05en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 24-28 May, 2015
dc.descriptionConference name: 227th ECS Meeting
dc.description.abstractIn this work the effect of Indium nitride (InN) nanoparticles (NPs) on the performance of a-Si: H solar cells has been investigated. The average J<inf>sc</inf> of InN NPs coated cells was found 6.76 mA/cm2 which is 16.69% higher than the average J<inf>sc</inf> of the reference cell which was 5.79 mA/cm2. Average efficiency of InN NPs coated cells showed 14.16% increase from 3.32% to 3.79%. Peak EQE has increased from 44.8% at 500 nm to 51.67% at 510 nm and peak IQE has increased from 51.70% at 510 nm to 68.38% at 500 nm for InN NPs coated cell. Further study shows that EQE change is larger between 510 nm-700 nm compared to IQE change indicting a surface scattering mechanism that reduces the reflectivity. However, between 400 nm-510 nm IQE change is larger than EQE change which indicates that energy downshifting mechanism is dominating. So overall performance enhancement can be attributed to the scattering and photoluminescence properties of InN NPs that enhances absorption inside a-Si: H solar cells. © The Electrochemical Society.en_US
dc.identifier.doi10.1149/06640.0009ecsten_US
dc.identifier.issn1938-5862
dc.identifier.urihttp://hdl.handle.net/11693/28241
dc.language.isoEnglishen_US
dc.publisherElectrochemical Society Inc.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1149/06640.0009ecsten_US
dc.source.titleECS Transactionsen_US
dc.subjectIndiumen_US
dc.subjectLight scatteringen_US
dc.subjectNanoparticlesen_US
dc.subjectNanotechnologyen_US
dc.subjectNitridesen_US
dc.subjectSiliconen_US
dc.subjectSolar cellsen_US
dc.subjectSurface scatteringen_US
dc.subjectA-Si:H solar cellsen_US
dc.subjectAverage efficienciesen_US
dc.subjectIndium nitrideen_US
dc.subjectN-i-p solar cellsen_US
dc.subjectNanoparticle (NPs)en_US
dc.subjectPerformance enhancementsen_US
dc.subjectPhotoluminescence propertiesen_US
dc.subjectScattering mechanismsen_US
dc.subjectSilicon solar cellsen_US
dc.titleEnhanced light scattering with energy downshifting using 16 nm indium nitride nanoparticles for improved thin-film a-Si N-i-P solar cellsen_US
dc.typeConference Paperen_US

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Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)