Ab initio study of hydrogenic effective mass impurities in Si nanowires

Date
2017-01
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Source Title
Journal of Physics Condensed Matter
Print ISSN
0953-8984
Electronic ISSN
Publisher
Institute of Physics Publishing
Volume
29
Issue
9
Pages
095303-1 - 095303-7
Language
English
Type
Article
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Abstract

The effect of B and P dopants on the band structure of Si nanowires is studied using electronic structure calculations based on density functional theory. At low concentrations a dispersionless band is formed, clearly distinguishable from the valence and conduction bands. Although this band is evidently induced by the dopant impurity, it turns out to have purely Si character. These results can be rigorously analyzed in the framework of effective mass theory. In the process we resolve some common misconceptions about the physics of hydrogenic shallow impurities, which can be more clearly elucidated in the case of nanowires than would be possible for bulk Si. We also show the importance of correctly describing the effect of dielectric confinement, which is not included in traditional electronic structure calculations, by comparing the obtained results with those of G0W0 calculations.

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Keywords
Confinement effects, First-principles calculations, Shallow impurities, Si nanowires, Calculations, Doping (additives), Electronic structure, Impurities, Nanowires, Silicon, Confinement effects, Dielectric confinement, Effective-mass theory, Electronic structure calculations, First-principles calculation, Low concentrations, Shallow impurities, Si nanowire, Density functional theory
Citation
Published Version (Please cite this version)