Modulating ohmic contact through InGaxNyOz interfacial layer for high-performance InGaN/GaN-based light-emitting diodes

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage8en_US
dc.citation.issueNumber3en_US
dc.citation.spage1en_US
dc.citation.volumeNumber8en_US
dc.contributor.authorZhu B.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorLu S.en_US
dc.contributor.authorZhang, Y.en_US
dc.contributor.authorChen, S.en_US
dc.contributor.authorHasanov N.en_US
dc.contributor.authorKang, X.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2018-04-12T10:43:12Z
dc.date.available2018-04-12T10:43:12Z
dc.date.issued2016en_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through the design and the formation of the InGaxNyOz interfacial layer, which maintains high reflectivity of silver and forms good ohmic contact between pristine silver and p-GaN. The interfacial layer was designed and formed by depositing a thin layer of indium tin oxide (ITO) on top of p-GaN, followed by thermal annealing, to enable the interdiffusion and the intermixing of In, Sn, Ga, O, and N atoms. Both electrical and optical performances of the LED with the optimized InGaxNyOz interfacial layer are improved, thus achieving the highest wall-plug efficiency, compared with those LEDs with and without ITO layers at operation current.en_US
dc.identifier.doi10.1109/JPHOT.2016.2570422en_US
dc.identifier.issn1943-0655
dc.identifier.urihttp://hdl.handle.net/11693/36523
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JPHOT.2016.2570422en_US
dc.source.titleIEEE Photonics Journalen_US
dc.subjectInGaxNyOz interfacial layeren_US
dc.subjectOhmic contacten_US
dc.subjectIndium tin oxide (ITO)en_US
dc.subjectLight emitting diodes (LED)en_US
dc.titleModulating ohmic contact through InGaxNyOz interfacial layer for high-performance InGaN/GaN-based light-emitting diodesen_US
dc.typeArticleen_US

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