Investigation of structural, optical and morphological properties of InGaN/GaN structure

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage11en_US
dc.citation.issueNumber1en_US
dc.citation.spage1en_US
dc.citation.volumeNumber125en_US
dc.contributor.authorBilgili, A. K.en_US
dc.contributor.authorAkpınar, Ö.en_US
dc.contributor.authorÖztürk, M. Ken_US
dc.contributor.authorBaşköse, C.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2020-02-19T13:14:18Z
dc.date.available2020-02-19T13:14:18Z
dc.date.issued2019
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this study, InGaN/GaN structure is investigated in the temperature range of 300–500 °C with steps of 50 °C. InGaN/ GaN multi-quantum well structure is deposited on c-orientated sapphire wafer by metal organic chemical vapour deposition method. All the parameters except for temperature kept constant during growth period. InGaN/GaN structures with different In content are investigated by XRD technique. Their structural, optical and morphological characteristics are determined by high resolution X-ray diffraction, Fourier transform spectroscopy (FTIR), photo luminescence (PL), transmission and atomic force microscopy (AFM). According to FTIR and PL spectra’s, it is noticed that band gap values coincide with blue region in the electromagnetic spectrum. As a result of transmission measurements it is seen that light is completely absorbed by the sample at approximately 390 nm. Using XRD technique, dislocation densities and strain are calculated. Full width at half maximum of the XRD peak values gained from X-ray diffraction are used in an alternative method called Williamson–Hall (W–H). Using W–H method, lateral and vertical crystal lengths and tilt angles are determined. Surface roughness parameters are investigated by AFM. Different properties of GaN and InGaN layers are compared as dependent on increasing temperature. According to AFM images it is seen that these structures have high surface roughness and large crystal size. All the results yielded from the mentioned methods are in good agreement with the previous works done by different authors.en_US
dc.description.provenanceSubmitted by Evrim Ergin (eergin@bilkent.edu.tr) on 2020-02-19T13:14:18Z No. of bitstreams: 1 Investigation_of_structural_optical_and_morphological_properties_of_InGaN_GaN_structure.pdf: 1885043 bytes, checksum: 0733270f5e60be700c3eb01c1cca76b3 (MD5)en
dc.description.provenanceMade available in DSpace on 2020-02-19T13:14:18Z (GMT). No. of bitstreams: 1 Investigation_of_structural_optical_and_morphological_properties_of_InGaN_GaN_structure.pdf: 1885043 bytes, checksum: 0733270f5e60be700c3eb01c1cca76b3 (MD5) Previous issue date: 2019en
dc.identifier.doi10.1007/s00339-018-2338-2en_US
dc.identifier.eissn1432-0630
dc.identifier.issn0947-8396
dc.identifier.urihttp://hdl.handle.net/11693/53438
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.relation.isversionofhttps://dx.doi.org/10.1007/s00339-018-2338-2en_US
dc.source.titleApplied Physics A: Materials Science and Processingen_US
dc.titleInvestigation of structural, optical and morphological properties of InGaN/GaN structureen_US
dc.typeArticleen_US

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