Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage253106-4en_US
dc.citation.issueNumber25en_US
dc.citation.spage253106-1en_US
dc.citation.volumeNumber104en_US
dc.contributor.authorEl-Atab, N.en_US
dc.contributor.authorCimen, F.en_US
dc.contributor.authorAlkis, S.en_US
dc.contributor.authorOrtac, B.en_US
dc.contributor.authorAlevli, M.en_US
dc.contributor.authorDietz, N.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorNayfeh, A.en_US
dc.date.accessioned2015-07-28T12:02:53Z
dc.date.available2015-07-28T12:02:53Z
dc.date.issued2014en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractIn this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al2O3 layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-Vgate measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4 V, the memory shows a noticeable threshold voltage (Vt) shift of 2 V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5 V is achieved and the Vt shift direction indicates that electrons tunnel from channel to charge storage layer. © 2014 AIP Publishing LLCen_US
dc.identifier.doi10.1063/1.4885397en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/12761
dc.language.isoEnglishen_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4885397en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectLaser-ablationen_US
dc.subjectSemiconductorsen_US
dc.subjectNanocrystalsen_US
dc.subjectGenerationen_US
dc.subjectBlueen_US
dc.titleEnhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layeren_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)