Metal-insulator transition induced by random dipoles

buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage013632-8en_US
dc.citation.issueNumber1en_US
dc.citation.spage013632-1en_US
dc.citation.volumeNumber88en_US
dc.contributor.authorLarcher, M.en_US
dc.contributor.authorMenotti, C.en_US
dc.contributor.authorTanatar, Bilalen_US
dc.contributor.authorVignolo, P.en_US
dc.date.accessioned2016-02-08T09:37:24Z
dc.date.available2016-02-08T09:37:24Z
dc.date.issued2013en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe study the localization properties of a test dipole feeling the disordered potential induced by dipolar impurities trapped at random positions in an optical lattice. This random potential is marked by correlations which are a convolution of short-range and long-range ones. We show that when short-range correlations are dominant, extended states can appear in the spectrum. Introducing long-range correlations, the extended states, if any, are wiped out and localization is restored over the whole spectrum. Moreover, long-range correlations can either increase or decrease the localization length at the center of the band, which indicates a richer behavior than previously predicted.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:37:24Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013en
dc.identifier.doi10.1103/PhysRevA.88.013632en_US
dc.identifier.eissn2469-9934
dc.identifier.issn2469-9926
dc.identifier.urihttp://hdl.handle.net/11693/20888
dc.language.isoEnglishen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevA.88.013632en_US
dc.source.titlePhysical Review Aen_US
dc.subjectLocalization lengthen_US
dc.subjectLocalization propertiesen_US
dc.subjectLong range correlationsen_US
dc.subjectRandom positionen_US
dc.subjectRandom potentialsen_US
dc.subjectShort-range correlationsen_US
dc.subjectMathematical modelsen_US
dc.subjectPhysicsen_US
dc.subjectSemiconductor insulator boundariesen_US
dc.titleMetal-insulator transition induced by random dipolesen_US
dc.typeArticleen_US

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