Metal-insulator transition induced by random dipoles

Date
2013
Advisor
Instructor
Source Title
Physical Review A
Print ISSN
2469-9926
Electronic ISSN
2469-9934
Publisher
American Physical Society
Volume
88
Issue
1
Pages
013632-1 - 013632-8
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

We study the localization properties of a test dipole feeling the disordered potential induced by dipolar impurities trapped at random positions in an optical lattice. This random potential is marked by correlations which are a convolution of short-range and long-range ones. We show that when short-range correlations are dominant, extended states can appear in the spectrum. Introducing long-range correlations, the extended states, if any, are wiped out and localization is restored over the whole spectrum. Moreover, long-range correlations can either increase or decrease the localization length at the center of the band, which indicates a richer behavior than previously predicted.

Course
Other identifiers
Book Title
Keywords
Localization length, Localization properties, Long range correlations, Random position, Random potentials, Short-range correlations, Mathematical models, Physics, Semiconductor insulator boundaries
Citation
Published Version (Please cite this version)