Layer-and strain-dependent optoelectronic properties of hexagonal AIN

buir.contributor.authorDurgun, Engin
dc.citation.epage165408-8en_US
dc.citation.issueNumber16en_US
dc.citation.spage165408en_US
dc.citation.volumeNumber92en_US
dc.contributor.authorKecik, D.en_US
dc.contributor.authorBacaksiz, C.en_US
dc.contributor.authorSenger, R. T.en_US
dc.contributor.authorDurgun, Enginen_US
dc.date.accessioned2016-02-08T09:34:12Z
dc.date.available2016-02-08T09:34:12Z
dc.date.issued2015en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractMotivated by the recent synthesis of layered hexagonal aluminum nitride (h-AlN), we investigate its layer- and strain-dependent electronic and optical properties by using first-principles methods. Monolayer h-AlN is a wide-gap semiconductor, which makes it interesting especially for usage in optoelectronic applications. The optical spectra of 1-, 2-, 3-, and 4-layered h-AlN indicate that the prominent absorption takes place outside the visible-light regime. Within the ultraviolet range, absorption intensities increase with the number of layers, approaching the bulk case. On the other hand, the applied tensile strain gradually redshifts the optical spectra. The many-body effects lead to a blueshift of the optical spectra, while exciton binding is also observed for 2D h-AlN. The possibility of tuning the optoelectronic properties via thickness and/or strain opens doors to novel technological applications of this promising material.en_US
dc.identifier.doi10.1103/PhysRevB.92.165408en_US
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/11693/20737
dc.language.isoEnglishen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.92.165408en_US
dc.source.titlePhysical Review B - Condensed Matter and Materials Physicsen_US
dc.titleLayer-and strain-dependent optoelectronic properties of hexagonal AINen_US
dc.typeArticleen_US
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