Structural and loss characterization of SiON layers for optical waveguide applications

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage761en_US
dc.citation.spage760en_US
dc.contributor.authorAy, Feridunen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorRoeloffzen, C.en_US
dc.contributor.authorDriessen, A.en_US
dc.coverage.spatialRio Grande, Puerto Rico, USAen_US
dc.date.accessioned2016-02-08T11:58:31Z
dc.date.available2016-02-08T11:58:31Z
dc.date.issued2000en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 13-16 November 2000en_US
dc.descriptionConference Name: 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000en_US
dc.description.abstractSilicon oxynitride films for optical waveguide applications were grown at 350°C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region. Annealing of the films was performed together with close monitoring of the N-H bond at 3400 cm-1 and correlated with optical loss measurements. The possibility of a new method for the reduction of the N-H bonds without annealing is discussed.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:58:31Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2000en
dc.identifier.doi10.1109/LEOS.2000.894076en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11693/27638
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://doi.org/10.1109/LEOS.2000.894076en_US
dc.source.titleProceedings of the 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000en_US
dc.subjectAnnealingen_US
dc.subjectFourier transform infrared spectroscopyen_US
dc.subjectHydrogen bondsen_US
dc.subjectLight absorptionen_US
dc.subjectOptical filmsen_US
dc.subjectOptical variables measurementen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectRefractive indexen_US
dc.subjectSilicon compoundsen_US
dc.subjectBending vibrationsen_US
dc.subjectOptical loss measurementen_US
dc.subjectSilicon oxynitride filmen_US
dc.subjectStretching vibrationsen_US
dc.subjectOptical waveguidesen_US
dc.titleStructural and loss characterization of SiON layers for optical waveguide applicationsen_US
dc.typeConference Paperen_US

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