Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage204en_US
dc.citation.issueNumber2en_US
dc.citation.spage202en_US
dc.citation.volumeNumber38en_US
dc.contributor.authorJi Y.en_US
dc.contributor.authorZhang, Z. -H.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorJu, Z. G.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorHasanov N.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorSun X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2016-02-08T09:41:20Z
dc.date.available2016-02-08T09:41:20Z
dc.date.issued2013en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure. © 2013 Optical Society of America.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:41:20Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013en
dc.identifier.doi10.1364/OL.38.000202en_US
dc.identifier.issn0146-9592
dc.identifier.urihttp://hdl.handle.net/11693/21111
dc.language.isoEnglishen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OL.38.000202en_US
dc.source.titleOptics Lettersen_US
dc.subjectActive regionsen_US
dc.subjectDual wavelengthen_US
dc.subjectForward voltageen_US
dc.subjectHigh currentsen_US
dc.subjectHole distributionen_US
dc.subjectHole transportsen_US
dc.subjectInGaN/GaNen_US
dc.subjectInjection levelsen_US
dc.subjectLight generationen_US
dc.subjectMg-dopingen_US
dc.subjectP-typeen_US
dc.subjectQuantum barriersen_US
dc.subjectRadiative recombinationen_US
dc.subjectBand structureen_US
dc.subjectGallium nitrideen_US
dc.subjectHole mobilityen_US
dc.subjectNumerical analysisen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectLight emitting diodesen_US
dc.titleEnhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrieren_US
dc.typeArticleen_US

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