Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors
buir.contributor.author | Bıyıklı, Necmi | |
dc.citation.issueNumber | 9 | en_US |
dc.citation.volumeNumber | 32 | en_US |
dc.contributor.author | Bıyıklı, Necmi | en_US |
dc.contributor.author | Haider A. | en_US |
dc.date.accessioned | 2018-04-12T13:51:05Z | |
dc.date.available | 2018-04-12T13:51:05Z | |
dc.date.issued | 2017 | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description.abstract | In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications. | en_US |
dc.description.provenance | Made available in DSpace on 2018-04-12T13:51:05Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2017 | en |
dc.identifier.doi | 10.1088/1361-6641/aa7ade | en_US |
dc.identifier.issn | 0268-1242 | |
dc.identifier.uri | http://hdl.handle.net/11693/38223 | |
dc.language.iso | English | en_US |
dc.publisher | Institute of Physics Publishing | en_US |
dc.relation.isversionof | https://doi.org/10.1088/1361-6641/aa7ade | en_US |
dc.source.title | Semiconductor Science and Technology | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | IIInitride | en_US |
dc.subject | Metal-oxide | en_US |
dc.subject | Nanoscale | en_US |
dc.subject | Nanostructured | en_US |
dc.subject | Self-limiting | en_US |
dc.subject | Semiconductor | en_US |
dc.subject | Atoms | en_US |
dc.subject | Catalysis | en_US |
dc.subject | Chemical sensors | en_US |
dc.subject | Coatings | en_US |
dc.subject | Deposition | en_US |
dc.subject | Deposits | en_US |
dc.subject | Dielectric materials | en_US |
dc.subject | Energy conversion | en_US |
dc.subject | Flexible electronics | en_US |
dc.subject | Metal nanoparticles | en_US |
dc.subject | Metals | en_US |
dc.subject | Nanostructured materials | en_US |
dc.subject | Nanostructures | en_US |
dc.subject | Nanotechnology | en_US |
dc.subject | Protective coatings | en_US |
dc.subject | Selenium compounds | en_US |
dc.subject | Semiconductor devices | en_US |
dc.subject | Semiconductor growth | en_US |
dc.subject | Semiconductor materials | en_US |
dc.subject | Surface reactions | en_US |
dc.subject | Temperature | en_US |
dc.subject | Thin films | en_US |
dc.subject | Transition metals | en_US |
dc.subject | WSI circuits | en_US |
dc.subject | Yarn | en_US |
dc.subject | III-Nitride | en_US |
dc.subject | Metal oxides | en_US |
dc.subject | Nano scale | en_US |
dc.subject | Nano-structured | en_US |
dc.subject | self-limiting | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.title | Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors | en_US |
dc.type | Review | en_US |
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