Wafer bonded capacitive micromachined underwater transducers

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buir.contributor.authorAtalar, Abdullah
buir.contributor.authorKöymen, Hayrettin
buir.contributor.orcidAtalar, Abdullah|0000-0002-1903-1240
dc.citation.epage979en_US
dc.citation.spage976en_US
dc.contributor.authorOlcum, Selimen_US
dc.contributor.authorOǧuz, Kaanen_US
dc.contributor.authorŞenlik, Muhammed N.en_US
dc.contributor.authorYamaner F. Y.en_US
dc.contributor.authorBozkurt, A.en_US
dc.contributor.authorAtalar, Abdullahen_US
dc.contributor.authorKöymen, Hayrettinen_US
dc.coverage.spatialRome, Italy
dc.date.accessioned2016-02-08T12:25:52Z
dc.date.available2016-02-08T12:25:52Z
dc.date.issued2009-09en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 20-23 Sept. 2009
dc.descriptionConference name: 2009 IEEE International Ultrasonics Symposium
dc.description.abstractIn this work we have designed, fabricated and tested CMUTs as underwater transducers. Single CMUT membranes with three different radii and 380 microns of thickness are fabricated for the demonstration of an underwater CMUT element. The active area of the transducer is fabricated on top of a 3″ silicon wafer. The silicon wafer is bonded to a gold electrode coated glass substrate wafer 10 cm in diameter. Thermally grown silicon oxide layer is used as the insulation layer between membrane and substrate electrodes. Electrical contacts and insulation are made by epoxy layers. Single CMUT elements are tested in air and in water. Approximately 40% bandwidth is achieved around 25 KHz with a single underwater CMUT cell. Radiated pressure field due to second harmonic generation when the CMUTs are driven with high sinusoidal voltages is measured. ©2009 IEEE.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:25:52Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2009en
dc.identifier.doi10.1109/ULTSYM.2009.5441699en_US
dc.identifier.urihttp://hdl.handle.net/11693/28638
dc.language.isoEnglishen_US
dc.publisherIEEE
dc.relation.isversionofhttp://dx.doi.org/10.1109/ULTSYM.2009.5441699en_US
dc.source.titleProceedings - 2009 IEEE International Ultrasonics Symposiumen_US
dc.subjectAnodic bondingen_US
dc.subjectCapacitive micromachined ultrasonic transducersen_US
dc.subjectComponenten_US
dc.subjectSecond harmonic generationen_US
dc.subjectUnderwater transducersen_US
dc.subjectActive areaen_US
dc.subjectAnodic bondingen_US
dc.subjectCapacitive micromachined ultrasonic transduceren_US
dc.subjectCoated glass substratesen_US
dc.subjectElectrical contactsen_US
dc.subjectEpoxy layersen_US
dc.subjectGold electrodesen_US
dc.subjectInsulation layersen_US
dc.subjectMicromachineden_US
dc.subjectPressure fielden_US
dc.subjectSilicon oxide layersen_US
dc.subjectSinusoidal voltageen_US
dc.subjectSubstrate electrodesen_US
dc.subjectUnderwater transducersen_US
dc.subjectFabricationen_US
dc.subjectGold coatingsen_US
dc.subjectHarmonic analysisen_US
dc.subjectHarmonic generationen_US
dc.subjectNonlinear opticsen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.subjectSilicon oxidesen_US
dc.subjectSilicon wafersen_US
dc.subjectSubstratesen_US
dc.subjectTransducersen_US
dc.subjectUltrasonic equipmenten_US
dc.subjectUltrasonic measurementen_US
dc.subjectUltrasonic wavesen_US
dc.subjectUltrasonicsen_US
dc.subjectWafer bondingen_US
dc.subjectUltrasonic transducersen_US
dc.titleWafer bonded capacitive micromachined underwater transducersen_US
dc.typeConference Paperen_US

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