Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors

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dc.citation.epage092111-3en_US
dc.citation.issueNumber9en_US
dc.citation.spage092111-1en_US
dc.citation.volumeNumber90en_US
dc.contributor.authorZebarjadi, M.en_US
dc.contributor.authorBulutay, C.en_US
dc.contributor.authorEsfarjani, K.en_US
dc.contributor.authorShakouri, A.en_US
dc.date.accessioned2016-02-08T10:15:09Z
dc.date.available2016-02-08T10:15:09Z
dc.date.issued2007en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractAn algorithm is proposed to include Pauli exclusion principle in Monte Carlo simulations. This algorithm has significant advantages to implement in terms of simplicity, speed, and memory storage; therefore it is ideal for the three-dimensional device simulators. The authors show that even in moderately high applied fields, one can obtain the correct electronic distribution. They give the correct definition for electronic temperature and show that in high applied fields, the quasi-Fermi level and electronic temperature become valley dependent. The effect of including Pauli exclusion principle on the band profile, electronic temperature, and quasi-Fermi level for the inhomogeneous case of a single barrier heterostructure is illustrated.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:15:09Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2007en
dc.identifier.doi10.1063/1.2709999en_US
dc.identifier.eissn1520-8842
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/23520
dc.language.isoEnglishen_US
dc.publisherA I P Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2709999en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectAlgorithmsen_US
dc.subjectComputer simulationen_US
dc.subjectFermi levelen_US
dc.subjectHeterojunctionsen_US
dc.subjectMonte Carlo methodsen_US
dc.subjectSemiconductor materialsen_US
dc.subjectElectronic distributionen_US
dc.subjectMemory storageen_US
dc.subjectPauli exclusion principleen_US
dc.subjectThree dimensional device simulatorsen_US
dc.subjectElectron transport propertiesen_US
dc.titleMonte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductorsen_US
dc.typeArticleen_US

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