Communication: Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltage

Simple item page
buir.contributor.authorSüzer, Şefik
dc.citation.epage5en_US
dc.citation.issueNumber14en_US
dc.citation.spage1en_US
dc.citation.volumeNumber135en_US
dc.contributor.authorSezen, H.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2016-02-08T09:50:40Z
dc.date.available2016-02-08T09:50:40Z
dc.date.issued2011en_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractBinding energies measured by x-ray photoelectron spectroscopy (XPS) are influenced by doping, since electrons are transferred to (p-type) and from (n-type) samples when they are introduced into the spectrometer, or brought into contact with each other (p-n junction). We show that the barely measurable Si2p binding energy difference between moderately doped n- and p-Si samples can be enhanced by photoillumination, due to reduction in surface band-bending, which otherwise screens this difference. Similar effects are also measured for samples containing oxide layers, since the band-bending at the buried oxide-Si interfaces is manifest as photovoltage shifts, although XPS does not probe the interface directly. The corresponding shift for the oxide layer of the p-Si is almost twice that of without the oxide, whereas no measurable shifts are observable for the oxide of the n-Si. These results are all related to band-bending effects and are vital in design and performance of photovoltaics and other related systems.en_US
dc.identifier.doi10.1063/1.3652964en_US
dc.identifier.eissn1089-7690
dc.identifier.issn0021-9606
dc.identifier.urihttp://hdl.handle.net/11693/21750
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3652964en_US
dc.source.titleJournal of Chemical Physicsen_US
dc.subjectBand-bending effectsen_US
dc.subjectBandbendingen_US
dc.subjectEnergy differencesen_US
dc.subjectOxide layeren_US
dc.subjectP-n junctionen_US
dc.subjectP-typeen_US
dc.subjectPeak shiften_US
dc.subjectPhoto-voltageen_US
dc.subjectPhotoilluminationen_US
dc.subjectPhotovoltaicsen_US
dc.subjectRelated systemsen_US
dc.subjectSurface photovoltagesen_US
dc.subjectBinding energyen_US
dc.subjectDoping (additives)en_US
dc.subjectPhotoelectron spectroscopyen_US
dc.subjectPhotonsen_US
dc.subjectPhotovoltaic effectsen_US
dc.subjectPotential energyen_US
dc.subjectSemiconductor junctionsen_US
dc.subjectSiliconen_US
dc.subjectSpectrometersen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.titleCommunication: Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltageen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Communication Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltage.pdf
Size:
935.96 KB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Department of Chemistry