Communication: Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltage
buir.contributor.author | Süzer, Şefik | |
dc.citation.epage | 5 | en_US |
dc.citation.issueNumber | 14 | en_US |
dc.citation.spage | 1 | en_US |
dc.citation.volumeNumber | 135 | en_US |
dc.contributor.author | Sezen, H. | en_US |
dc.contributor.author | Süzer, Şefik | en_US |
dc.date.accessioned | 2016-02-08T09:50:40Z | |
dc.date.available | 2016-02-08T09:50:40Z | |
dc.date.issued | 2011 | en_US |
dc.department | Department of Chemistry | en_US |
dc.description.abstract | Binding energies measured by x-ray photoelectron spectroscopy (XPS) are influenced by doping, since electrons are transferred to (p-type) and from (n-type) samples when they are introduced into the spectrometer, or brought into contact with each other (p-n junction). We show that the barely measurable Si2p binding energy difference between moderately doped n- and p-Si samples can be enhanced by photoillumination, due to reduction in surface band-bending, which otherwise screens this difference. Similar effects are also measured for samples containing oxide layers, since the band-bending at the buried oxide-Si interfaces is manifest as photovoltage shifts, although XPS does not probe the interface directly. The corresponding shift for the oxide layer of the p-Si is almost twice that of without the oxide, whereas no measurable shifts are observable for the oxide of the n-Si. These results are all related to band-bending effects and are vital in design and performance of photovoltaics and other related systems. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T09:50:40Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2011 | en |
dc.identifier.doi | 10.1063/1.3652964 | en_US |
dc.identifier.eissn | 1089-7690 | |
dc.identifier.issn | 0021-9606 | |
dc.identifier.uri | http://hdl.handle.net/11693/21750 | |
dc.language.iso | English | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.3652964 | en_US |
dc.source.title | Journal of Chemical Physics | en_US |
dc.subject | Band-bending effects | en_US |
dc.subject | Bandbending | en_US |
dc.subject | Energy differences | en_US |
dc.subject | Oxide layer | en_US |
dc.subject | P-n junction | en_US |
dc.subject | P-type | en_US |
dc.subject | Peak shift | en_US |
dc.subject | Photo-voltage | en_US |
dc.subject | Photoillumination | en_US |
dc.subject | Photovoltaics | en_US |
dc.subject | Related systems | en_US |
dc.subject | Surface photovoltages | en_US |
dc.subject | Binding energy | en_US |
dc.subject | Doping (additives) | en_US |
dc.subject | Photoelectron spectroscopy | en_US |
dc.subject | Photons | en_US |
dc.subject | Photovoltaic effects | en_US |
dc.subject | Potential energy | en_US |
dc.subject | Semiconductor junctions | en_US |
dc.subject | Silicon | en_US |
dc.subject | Spectrometers | en_US |
dc.subject | X ray photoelectron spectroscopy | en_US |
dc.title | Communication: Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltage | en_US |
dc.type | Article | en_US |
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