Plasmonically enhanced ZnO thin-film-photo-transistor with dynamic responsivity control

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage344en_US
dc.citation.spage343en_US
dc.contributor.authorÖzcan, Ayşeen_US
dc.contributor.authorBattal, Enesen_US
dc.contributor.authorAtar, Fatih Bilgeen_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.coverage.spatialBellevue, WA, USAen_US
dc.date.accessioned2016-02-08T12:05:43Z
dc.date.available2016-02-08T12:05:43Z
dc.date.issued2013en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 8-12 Sept. 2013en_US
dc.description.abstractWe fabricated an ZnO based thin-film photo-transistor with electrically tunable photo-responsivity operating in the UV and visible spectra and designed plasmonic structures enhancing the device performance up to 6 folds below the band-gap of ZnO. © 2013 IEEE.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:05:43Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013en
dc.identifier.doi10.1109/IPCon.2013.6656577en_US
dc.identifier.urihttp://hdl.handle.net/11693/27934
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/IPCon.2013.6656577en_US
dc.source.title2013 IEEE Photonics Conferenceen_US
dc.subjectDevice performanceen_US
dc.subjectElectrically tunableen_US
dc.subjectPhotoresponsivityen_US
dc.subjectResponsivityen_US
dc.subjectVisible spectraen_US
dc.subjectZnOen_US
dc.subjectPhototransistorsen_US
dc.subjectZinc oxideen_US
dc.subjectPhotonicsen_US
dc.titlePlasmonically enhanced ZnO thin-film-photo-transistor with dynamic responsivity controlen_US
dc.typeConference Paperen_US

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