A theoretical model for the epitaxial growth of Si(100) surface
Date
2000
Authors
Editor(s)
Advisor
Çıracı, Salim
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Print ISSN
Electronic ISSN
Publisher
Bilkent University
Volume
Issue
Pages
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
In this thesis, we investigated atomic scale mechanisms of growth on the Si(lOO) surface. First principles quantum molecular dynamics calculations are performed, where self-consistent field electronic structure calculations within the density functional theory, and ionic relaxations carried out concomitantly. By using this method, we first determined the binding energy and binding sites of adatoms and ad-dimers. In the second stage, we simulated different configuration of dimer construction. In the third stage, we analyzed temperature dependent behaviour of dimers and we investigated translational and rotational motion of dimers. Finally, we presented a new theoretical model for ID epitaxial growth.