High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage4187en_US
dc.citation.issueNumber21en_US
dc.citation.spage4185en_US
dc.citation.volumeNumber84en_US
dc.contributor.authorButun, B.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorAytur, O.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorPostigo, P. A.en_US
dc.contributor.authorSilveira, J. P.en_US
dc.contributor.authorAlija, A. R.en_US
dc.date.accessioned2016-02-08T10:26:55Z
dc.date.available2016-02-08T10:26:55Z
dc.date.issued2004en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, growth and fabrication were discussed. A resonant-cavity-detector structure was used to selectively enhance the photoresponse at 1.55 μm. The bottom mirror of the resonant cavity was formed by a highly reflecting 15-pair GaAs/AlAs Bragg mirror and molecular-beam epitaxy was used for wafer growth. It was found that the fabricated devices exhibited a resonance of around 1548 nm and an enhancement factor of 7.5 was achieved when compared to the efficiency of a single-pass detector.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:26:55Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2004en
dc.identifier.doi10.1063/1.1756208en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/24284
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1756208en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectBandwidthen_US
dc.subjectCavity resonatorsen_US
dc.subjectLight absorptionen_US
dc.subjectMirrorsen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectOptical fibersen_US
dc.subjectPhotocurrentsen_US
dc.subjectPhotodetectorsen_US
dc.subjectReflection high energy electron diffractionen_US
dc.subjectResonanceen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectDetector cavitiesen_US
dc.subjectOptical designsen_US
dc.subjectPulse-response measurementsen_US
dc.subjectResonant-cavity-detector structuresen_US
dc.subjectPhotodiodesen_US
dc.titleHigh-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodesen_US
dc.typeArticleen_US

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