High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes
Date
2004
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
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Publisher
American Institute of Physics
Volume
84
Issue
21
Pages
4185 - 4187
Language
English
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Abstract
The 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, growth and fabrication were discussed. A resonant-cavity-detector structure was used to selectively enhance the photoresponse at 1.55 μm. The bottom mirror of the resonant cavity was formed by a highly reflecting 15-pair GaAs/AlAs Bragg mirror and molecular-beam epitaxy was used for wafer growth. It was found that the fabricated devices exhibited a resonance of around 1548 nm and an enhancement factor of 7.5 was achieved when compared to the efficiency of a single-pass detector.
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Keywords
Bandwidth , Cavity resonators , Light absorption , Mirrors , Molecular beam epitaxy , Optical fibers , Photocurrents , Photodetectors , Reflection high energy electron diffraction , Resonance , Semiconducting aluminum compounds , Semiconducting gallium arsenide , Detector cavities , Optical designs , Pulse-response measurements , Resonant-cavity-detector structures , Photodiodes