High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes
Date
2004
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
Publisher
American Institute of Physics
Volume
84
Issue
21
Pages
4185 - 4187
Language
English
Type
Journal Title
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Volume Title
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Abstract
The 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, growth and fabrication were discussed. A resonant-cavity-detector structure was used to selectively enhance the photoresponse at 1.55 μm. The bottom mirror of the resonant cavity was formed by a highly reflecting 15-pair GaAs/AlAs Bragg mirror and molecular-beam epitaxy was used for wafer growth. It was found that the fabricated devices exhibited a resonance of around 1548 nm and an enhancement factor of 7.5 was achieved when compared to the efficiency of a single-pass detector.
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Keywords
Bandwidth, Cavity resonators, Light absorption, Mirrors, Molecular beam epitaxy, Optical fibers, Photocurrents, Photodetectors, Reflection high energy electron diffraction, Resonance, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Detector cavities, Optical designs, Pulse-response measurements, Resonant-cavity-detector structures, Photodiodes