Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

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buir.contributor.authorBıyıklı, Necmi
dc.citation.epage155101-6en_US
dc.citation.issueNumber15en_US
dc.citation.spage155101en_US
dc.citation.volumeNumber117en_US
dc.contributor.authorAltuntas, H.en_US
dc.contributor.authorOzgit Akgun, C.en_US
dc.contributor.authorDonmez, I.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2016-02-08T10:12:22Z
dc.date.available2016-02-08T10:12:22Z
dc.date.issued2015en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractHere, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2-21.5 MV/m), Schottky emission (23.6-39.5 MV/m), Frenkel-Poole emission (63.8-211.8 MV/m), trap-assisted tunneling (226-280 MV/m), and Fowler-Nordheim tunneling (290-447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.en_US
dc.identifier.doi10.1063/1.4917567en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/23336
dc.language.isoEnglishen_US
dc.publisherA I P Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4917567en_US
dc.source.titleJournal of Applied Physicsen_US
dc.subjectAluminumen_US
dc.subjectAtomic layer depositionen_US
dc.subjectCapacitorsen_US
dc.subjectElectric fieldsen_US
dc.subjectMetal insulator boundariesen_US
dc.subjectMIS devicesen_US
dc.subjectMOS capacitorsen_US
dc.subjectSemiconducting siliconen_US
dc.subjectSiliconen_US
dc.subjectTemperatureen_US
dc.subjectThin filmsen_US
dc.subjectThreshold voltageen_US
dc.subjectVoltage measurementen_US
dc.subjectX ray diffractionen_US
dc.subjectZinc sulfideen_US
dc.subjectCapacitance voltage measurementsen_US
dc.subjectCurrent transport mechanismen_US
dc.subjectCurrent voltage measurementen_US
dc.subjectGrazing incidence X-ray diffractionen_US
dc.subjectMetal insulator semiconductor capacitorsen_US
dc.subjectPlasma-enhanced atomic layer depositionen_US
dc.subjectStructural characterizationen_US
dc.subjectTrap assisted tunnelingen_US
dc.subjectDepositionen_US
dc.titleCurrent transport mechanisms in plasma-enhanced atomic layer deposited AlN thin filmsen_US
dc.typeArticleen_US

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Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)