Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
buir.contributor.author | Demir, Hilmi Volkan | |
buir.contributor.orcid | Demir, Hilmi Volkan|0000-0003-1793-112X | |
dc.citation.epage | 2486 | en_US |
dc.citation.issueNumber | 8 | en_US |
dc.citation.spage | 2483 | en_US |
dc.citation.volumeNumber | 39 | en_US |
dc.contributor.author | Zhang, Zi-Hui | en_US |
dc.contributor.author | Ju, Z. | en_US |
dc.contributor.author | Liu W. | en_US |
dc.contributor.author | Tan S.T. | en_US |
dc.contributor.author | Ji Y. | en_US |
dc.contributor.author | Kyaw, Z. | en_US |
dc.contributor.author | Zhang X. | en_US |
dc.contributor.author | Hasanov N. | en_US |
dc.contributor.author | Sun, X. W. | en_US |
dc.contributor.author | Demir, Hilmi Volkan | en_US |
dc.date.accessioned | 2016-02-08T10:56:43Z | |
dc.date.available | 2016-02-08T10:56:43Z | |
dc.date.issued | 2014 | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancement of hole injection efficiency by manipulating the hole transport mechanism through insertion of a thin GaN layer of 1 nm into the p-AlGaN EBL and propose an AlGaN/GaN/AlGaN-type EBL outperforming conventional AlGaN EBLs. Here, the position of the inserted thin GaN layer relative to the p-GaN region is found to be the key to enhancing the hole injection efficiency. InGaN/ GaN LEDs with the proposed p-type AlGaN/GaN/AlGaN EBL have demonstrated substantially higher optical output power and external quantum efficiency. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:56:43Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2014 | en |
dc.identifier.doi | 10.1364/OL.39.002483 | en_US |
dc.identifier.issn | 0146-9592 | |
dc.identifier.uri | http://hdl.handle.net/11693/26224 | |
dc.language.iso | English | en_US |
dc.publisher | Optical Society of America | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1364/OL.39.002483 | en_US |
dc.source.title | Optics Letters | en_US |
dc.subject | Efficiency | en_US |
dc.subject | Gallium nitride | en_US |
dc.subject | Hole mobility | en_US |
dc.subject | Light emitting diodes | en_US |
dc.subject | Electron blocking layer | en_US |
dc.subject | Electron overflow | en_US |
dc.subject | External quantum efficiency | en_US |
dc.subject | GaN layers | en_US |
dc.subject | Hole injection | en_US |
dc.subject | Hole transport mechanism | en_US |
dc.subject | Ingan/gan lightemitting diodes (LEDs) | en_US |
dc.subject | Optical output power | en_US |
dc.subject | Electron injection | en_US |
dc.title | Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering | en_US |
dc.type | Article | en_US |
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