Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage2486en_US
dc.citation.issueNumber8en_US
dc.citation.spage2483en_US
dc.citation.volumeNumber39en_US
dc.contributor.authorZhang, Zi-Huien_US
dc.contributor.authorJu, Z.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorJi Y.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorZhang X.en_US
dc.contributor.authorHasanov N.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2016-02-08T10:56:43Z
dc.date.available2016-02-08T10:56:43Z
dc.date.issued2014en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancement of hole injection efficiency by manipulating the hole transport mechanism through insertion of a thin GaN layer of 1 nm into the p-AlGaN EBL and propose an AlGaN/GaN/AlGaN-type EBL outperforming conventional AlGaN EBLs. Here, the position of the inserted thin GaN layer relative to the p-GaN region is found to be the key to enhancing the hole injection efficiency. InGaN/ GaN LEDs with the proposed p-type AlGaN/GaN/AlGaN EBL have demonstrated substantially higher optical output power and external quantum efficiency.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:56:43Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2014en
dc.identifier.doi10.1364/OL.39.002483en_US
dc.identifier.issn0146-9592
dc.identifier.urihttp://hdl.handle.net/11693/26224
dc.language.isoEnglishen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OL.39.002483en_US
dc.source.titleOptics Lettersen_US
dc.subjectEfficiencyen_US
dc.subjectGallium nitrideen_US
dc.subjectHole mobilityen_US
dc.subjectLight emitting diodesen_US
dc.subjectElectron blocking layeren_US
dc.subjectElectron overflowen_US
dc.subjectExternal quantum efficiencyen_US
dc.subjectGaN layersen_US
dc.subjectHole injectionen_US
dc.subjectHole transport mechanismen_US
dc.subjectIngan/gan lightemitting diodes (LEDs)en_US
dc.subjectOptical output poweren_US
dc.subjectElectron injectionen_US
dc.titleImproving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineeringen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
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