Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques

Simple item page
buir.contributor.authorGülseren, Melisa Ekin
buir.contributor.authorSalkım, Gurur
buir.contributor.authorUral, Sertaç
buir.contributor.authorKayal, Ömer Ahmet
buir.contributor.authorÖztürk, Mustafa
buir.contributor.authorBütün, Bayram
buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorKurt, Gökhan
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage357en_US
dc.citation.spage351en_US
dc.citation.volumeNumber7en_US
dc.contributor.authorKurt, Gökhanen_US
dc.contributor.authorGülseren, Melisa Ekinen_US
dc.contributor.authorSalkım, Gururen_US
dc.contributor.authorUral, Sertaçen_US
dc.contributor.authorKayal, Ömer Ahmeten_US
dc.contributor.authorÖztürk, Mustafaen_US
dc.contributor.authorBütün, Bayramen_US
dc.contributor.authorKabak, M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2020-02-06T07:51:51Z
dc.date.available2020-02-06T07:51:51Z
dc.date.issued2019
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractA hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment duration) and epitaxial differences (AlGaN and carbon doped GaN buffers) on the DC characteristics of the normally off HEMTs were investigated. Two different epitaxial structures and three different process variations were compared. Epitaxial structures prepared with an AlGaN buffer showed a higher threshold voltage (V th = +3.59 V) than those prepared with a GaN buffer (V th = +1.85 V).en_US
dc.description.provenanceSubmitted by Zeynep Aykut (zeynepay@bilkent.edu.tr) on 2020-02-06T07:51:51Z No. of bitstreams: 1 Investigation_of_a_hybrid_approach_for_normally_off_GaN_HEMTs_using_fluorine_treatment_and_recess_etch_techniques.pdf: 1383439 bytes, checksum: fb622729464c0cbbfcd77dc0399b5b83 (MD5)en
dc.description.provenanceMade available in DSpace on 2020-02-06T07:51:51Z (GMT). No. of bitstreams: 1 Investigation_of_a_hybrid_approach_for_normally_off_GaN_HEMTs_using_fluorine_treatment_and_recess_etch_techniques.pdf: 1383439 bytes, checksum: fb622729464c0cbbfcd77dc0399b5b83 (MD5) Previous issue date: 2019en
dc.identifier.doi10.1109/JEDS.2019.2899387en_US
dc.identifier.issn2168-6734
dc.identifier.urihttp://hdl.handle.net/11693/53115
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.isversionofhttps://dx.doi.org/10.1109/JEDS.2019.2899387en_US
dc.source.titleIEEE Journal of the Electron Devices Societyen_US
dc.subjectAlGaNen_US
dc.subjectEnhancement-modeen_US
dc.subjectFluorine plasma implantationen_US
dc.subjectGaNen_US
dc.subjectHEMTen_US
dc.subjectNormally-offen_US
dc.subjectRecess etchen_US
dc.titleInvestigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniquesen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Investigation_of_a_hybrid_approach_for_normally_off_GaN_HEMTs_using_fluorine_treatment_and_recess_etch_techniques.pdf
Size:
1.32 MB
Format:
Adobe Portable Document Format
Description:
View / Download
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - NANOTAM
Scholarly Publications - Physics
Scholarly Publications - UNAM