GaN-based single stage low noise amplifier for X-band applications

Simple item page
buir.contributor.authorÇağlar, Gizem Tendürüs
buir.contributor.authorAras, Yunus Erdem
buir.contributor.authorUrfalı, Emirhan
buir.contributor.authorYılmaz, Doğan
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidAras, Yunus Erdem|0000-0001-8291-8509
buir.contributor.orcidUrfalı, Emirhan|0000-0003-1708-0441
buir.contributor.orcidYılmaz, Doğan|0000-0001-6102-4477
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage[4]en_US
dc.citation.spage[1]en_US
dc.contributor.authorÇağlar, Gizem Tendürüs
dc.contributor.authorAras, Yunus Erdem
dc.contributor.authorUrfalı, Emirhan
dc.contributor.authorYılmaz, Doğan
dc.contributor.authorÖzbay, Ekmel
dc.contributor.authorNazlıbilek, Sedat
dc.coverage.spatialPizzo Calabro, Italyen_US
dc.date.accessioned2023-02-14T05:53:54Z
dc.date.available2023-02-14T05:53:54Z
dc.date.issued2022-07-18
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionConference Name: 2022 Microwave Mediterranean Symposium (MMS)en_US
dc.descriptionDate of Conference: 09-13 May 2022en_US
dc.description.abstractSource degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stability. This work presents an MMIC design for the frequency band of 8–11 GHz by using HEMTs with source degeneration in 0.15 µm GaN on SiC technology. All design work is done in the Advanced Design System. The LNA delivers more than 6.9 dB gain with better than 8.5 dB and 9.5 dB input and output return losses, respectively. In addition, the gain ripple is around 2.7 dB. The noise figure of the amplifier is achieved below 1.1 dB with P1dB of 17.2 dBm and %12.7 drain efficiency within the operating bandwidth at the bias conditions of 9 V /20 mA.en_US
dc.identifier.doi10.1109/MMS55062.2022.9825558en_US
dc.identifier.eissn2157-9830
dc.identifier.issn2157-9822
dc.identifier.urihttp://hdl.handle.net/11693/111221
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://www.doi.org/10.1109/MMS55062.2022.9825558en_US
dc.source.titleMicrowave Mediterranean Symposium (MMS)en_US
dc.subjectGaN HEMTen_US
dc.subjectLow noise amplifieren_US
dc.subjectX-banden_US
dc.subjectSource degenerationen_US
dc.subjectMMICen_US
dc.subjectSiCen_US
dc.titleGaN-based single stage low noise amplifier for X-band applicationsen_US
dc.typeConference Paperen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
GaN-based_Single_Stage_Low_Noise_Amplifier_for_X-band_Applications.pdf
Size:
723 KB
Format:
Adobe Portable Document Format
Description:
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.69 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Nanotechnology Research Center (NANOTAM)
Department of Electrical and Electronics Engineering