Synthesis of ultra-small Si / Ge semiconductor nano-particles using electrochemistry

Date
2012
Advisor
Instructor
Source Title
Materials Chemistry and Physics
Print ISSN
0254-0584
Electronic ISSN
Publisher
Elsevier
Volume
134
Issue
2-3
Pages
616 - 622
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

In this paper, we describe the formation of colloidal Si/Ge semiconductor nano-particles by electrochemical etching of Ge quantum dots (GEDOT), Silicon-Germanium graded layers (GRADE) and Silicon-Germanium multi-quantum well (MQW) structures which are prepared on Silicon wafers using low pressure chemical vapor deposition (LPCVD) technique. The formation of Si/Ge nano-particles is verified by transmission electron microscope (TEM) images and photoluminescence (PL) measurements. The Si/Ge nano-particles obtained from GEDOT and GRADE structures, gave blue emissions, upon 250 nm, and 300 nm UV excitations. However, the nano-particles obtained from the MQW structure did exhibit various color emissions (orange, blue, green and red) upon excitation with 250 nm, 360 nm, 380 nm and 400 nm wavelength light.

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Keywords
Electrochemical techniques, Electron microscopy (STEM, TEM, SEM), Nanostructures, Photoluminescence spectroscopy, Blue emission, Color emission, Electrochemical techniques, Ge quantum dot, Graded layers, Multiquantum wells, Photoluminescence measurements, Si/Ge, Silicon germanium, Transmission electron microscope, Ultra-small, UV excitation, Germanium, Nanoparticles, Nanostructures, Photoluminescence spectroscopy, Semiconductor quantum dots, Silicon wafers, Transmission electron microscopy, Semiconductor quantum wells
Citation
Published Version (Please cite this version)