Auger recombination and carrier multiplication in embedded silicon and germanium nanocrystals

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dc.citation.issueNumber12en_US
dc.citation.volumeNumber77en_US
dc.contributor.authorSevik, C.en_US
dc.contributor.authorBulutay, C.en_US
dc.date.accessioned2016-02-08T10:09:51Z
dc.date.available2016-02-08T10:09:51Z
dc.date.issued2008en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractFor Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, the Auger recombination and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave functions. Our results in support of recent experimental data offer other predictions. We extract simple Auger constants valid for NCs. We show that both Si and Ge NCs can benefit from photovoltaic efficiency improvement via CM due to the fact that under an optical excitation exceeding twice the band-gap energy, the electrons gain lion's share from the total excess energy and can cause a CM. We predict that CM becomes especially efficient for hot electrons with an excess energy of about 1 eV above the CM threshold.en_US
dc.identifier.doi10.1103/PhysRevB.77.125414en_US
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/11693/23169
dc.language.isoEnglishen_US
dc.publisherThe American Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.77.125414en_US
dc.source.titlePhysical Review B - Condensed Matter and Materials Physicsen_US
dc.titleAuger recombination and carrier multiplication in embedded silicon and germanium nanocrystalsen_US
dc.typeArticleen_US

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