InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature

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buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage35en_US
dc.citation.spage34en_US
dc.contributor.authorSarı, Emreen_US
dc.contributor.authorNizamoğlu, Sedaten_US
dc.contributor.authorÖzel, Tuncayen_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.contributor.authorİnal, Ayşeen_US
dc.contributor.authorÜlker, Erkinen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorDikme, Y.en_US
dc.contributor.authorHeuken, M.en_US
dc.coverage.spatialMontreal, Que., Canadaen_US
dc.date.accessioned2016-02-08T11:39:45Z
dc.date.available2016-02-08T11:39:45Z
dc.date.issued2007en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 29 October-2 November 2006en_US
dc.descriptionConference Name: 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006en_US
dc.description.abstractIn this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:39:45Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2007en
dc.identifier.doi10.1109/LEOS.2006.278805en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11693/26926
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LEOS.2006.278805en_US
dc.source.titleProceedings of the 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006en_US
dc.subjectGallium nitrideen_US
dc.subjectLight emitting diodesen_US
dc.subjectElectroluminescenceen_US
dc.subjectEpitaxial growthen_US
dc.subjectTemperature dependenceen_US
dc.subjectWavelength measurementen_US
dc.subjectPhotoluminescenceen_US
dc.subjectStimulated emissionen_US
dc.titleInGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperatureen_US
dc.typeConference Paperen_US

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