InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature
buir.contributor.orcid | Demir, Hilmi Volkan|0000-0003-1793-112X | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 35 | en_US |
dc.citation.spage | 34 | en_US |
dc.contributor.author | Sarı, Emre | en_US |
dc.contributor.author | Nizamoğlu, Sedat | en_US |
dc.contributor.author | Özel, Tuncay | en_US |
dc.contributor.author | Demir, Hilmi Volkan | en_US |
dc.contributor.author | İnal, Ayşe | en_US |
dc.contributor.author | Ülker, Erkin | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.contributor.author | Dikme, Y. | en_US |
dc.contributor.author | Heuken, M. | en_US |
dc.coverage.spatial | Montreal, Que., Canada | en_US |
dc.date.accessioned | 2016-02-08T11:39:45Z | |
dc.date.available | 2016-02-08T11:39:45Z | |
dc.date.issued | 2007 | en_US |
dc.department | Department of Physics | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.description | Date of Conference: 29 October-2 November 2006 | en_US |
dc.description | Conference Name: 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006 | en_US |
dc.description.abstract | In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T11:39:45Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2007 | en |
dc.identifier.doi | 10.1109/LEOS.2006.278805 | en_US |
dc.identifier.issn | 1092-8081 | en_US |
dc.identifier.uri | http://hdl.handle.net/11693/26926 | |
dc.language.iso | English | en_US |
dc.publisher | IEEE | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/LEOS.2006.278805 | en_US |
dc.source.title | Proceedings of the 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006 | en_US |
dc.subject | Gallium nitride | en_US |
dc.subject | Light emitting diodes | en_US |
dc.subject | Electroluminescence | en_US |
dc.subject | Epitaxial growth | en_US |
dc.subject | Temperature dependence | en_US |
dc.subject | Wavelength measurement | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Stimulated emission | en_US |
dc.title | InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature | en_US |
dc.type | Conference Paper | en_US |
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