InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage35
dc.citation.spage34
dc.contributor.authorSarı, Emre
dc.contributor.authorNizamoğlu, Sedat
dc.contributor.authorÖzel, Tuncay
dc.contributor.authorDemir, Hilmi Volkan
dc.contributor.authorİnal, Ayşe
dc.contributor.authorÜlker, Erkin
dc.contributor.authorÖzbay, Ekmel
dc.contributor.authorDikme, Y.
dc.contributor.authorHeuken, M.
dc.coverage.spatialMontreal, Que., Canada
dc.date.accessioned2016-02-08T11:39:45Z
dc.date.available2016-02-08T11:39:45Z
dc.date.issued2007
dc.departmentDepartment of Physics
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentNanotechnology Research Center (NANOTAM)
dc.description.abstractIn this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures.
dc.identifier.doi10.1109/LEOS.2006.278805
dc.identifier.issn1092-8081
dc.identifier.urihttp://hdl.handle.net/11693/26926
dc.language.isoEnglish
dc.publisherIEEE
dc.relation.isversionofhttp://dx.doi.org/10.1109/LEOS.2006.278805
dc.source.titleProceedings of the 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006
dc.subjectGallium nitride
dc.subjectLight emitting diodes
dc.subjectElectroluminescence
dc.subjectEpitaxial growth
dc.subjectTemperature dependence
dc.subjectWavelength measurement
dc.subjectPhotoluminescence
dc.subjectStimulated emission
dc.titleInGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature
dc.typeConference Paper
relation.isAuthorOfPublication8c1d6866-696d-46a3-a77d-5da690629296

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