InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature
Date
2007
Editor(s)
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Source Title
Proceedings of the 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006
Print ISSN
1092-8081
Electronic ISSN
Publisher
IEEE
Volume
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Pages
34 - 35
Language
English
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Abstract
In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures.