Publication: Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
Date
2009-10
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.
Description
Date of Conference: 4-8 Oct. 2009
Conference name: 2009 IEEE LEOS Annual Meeting Conference Proceedings
Conference name: 2009 IEEE LEOS Annual Meeting Conference Proceedings