Publication:
Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors

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Abstract

Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.

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Date of Conference: 4-8 Oct. 2009
Conference name: 2009 IEEE LEOS Annual Meeting Conference Proceedings

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