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Experimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodes

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage183524-3en_US
dc.citation.issueNumber18en_US
dc.citation.spage183524-1en_US
dc.citation.volumeNumber89en_US
dc.contributor.authorTut, T.en_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorBütün, B.en_US
dc.contributor.authorBütün, S.en_US
dc.contributor.authorÜlker, E.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2016-02-08T10:17:07Z
dc.date.available2016-02-08T10:17:07Z
dc.date.issued2006en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky barrier, suitable for back and front illuminations, is used to determine the impact ionization coefficients of electrons and holes in an AlGaN based avalanche photodiode. © 2006 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2385216en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/23666
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2385216en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectAluminum compoundsen_US
dc.subjectAvalanche diodesen_US
dc.subjectElectronsen_US
dc.subjectIonizationen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectSolar energyen_US
dc.subjectIonization coefficientsen_US
dc.subjectPhotomultiplicationen_US
dc.subjectPhotodiodesen_US
dc.titleExperimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodesen_US
dc.typeArticleen_US
dspace.entity.typePublication
relation.isAuthorOfPublication8c1d6866-696d-46a3-a77d-5da690629296
relation.isAuthorOfPublication.latestForDiscovery8c1d6866-696d-46a3-a77d-5da690629296

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