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Browsing by Subject "ab initio"

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    Adsorption and dissociation of hydrogen molecule on carbon nanotubes
    (2004) Öztürk, Yavuz
    Earlier, it has been suggested that carbon nanotubes can provide high storage capacity and other physical properties suitable for the fuel cell technologies. In this thesis we have investigated adsorption, desorption and dissociation of hydrogen molecule on the surface of the zigzag (8,0) single-wall carbon nanotube (SWNT) by carrying out extensive first-principles pseudopotential plane wave calculations within the Density Functional Theory (DFT). We found that while H2 molecule cannot be bound to the surface of bare SWNT, an elastic radial deformation leading to the elliptical deformation of the circular cross-section renders the physisorption of the molecule possible. Coadsorption of Li atom on the SWNT makes the similar effect, and hence enhances the physisorption. That an adsorbed H2 can be desorbed upon releasing the elastic radial strain is extremely convenient for the storage. In addition to that, we found that a Pt atom coadsorbed on the SWNT can form a strong chemisorption bond with a H2 molecule. If a single H2 molecule engages in interactions with more than one coadsorbed Pt atom at its close proximity it dissociates into single H atoms, which, in turn, make Pt-H bonds. The interaction between H2 and coadsorbed Pd atom is similar to Pt, but it is weaker. We believe that these findings clarify earlier controversial results related to the storage of H2 in carbon nanotubes, and makes important contributions to fuel cell technology.
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    A first-principles study of defects and adatoms on silicon carbide honetcomb structures
    (2009) Bekaroğlu, Erman
    In this thesis a study of electronic and magnetic properties of two dimensional (2D), single layer of silicon carbide (SiC) in hexagonal structure and its quasi 1D armchair nanoribbons are presented by using first-principles plane wave method. In order to reveal dimensionality effects, a brief study of 3D bulk and 1D atomic chain of SiC are also included. The stability analysis based on the calculation of phonon mode frequencies are carried out for different dimensionalities. It is found that 2D single layer SiC in honeycomb structure and its bare and hydrogen passivated nanoribbons are ionic, non magnetic, wide band gap semiconductors. The band gap further increases upon self-energy corrections. Upon passivation of Si and C atoms at the edges of nanoribbon with hydrogen atoms, the edge states are discarded and the band gap increases. The effect of various vacancy defects, adatoms and substitutional impurities on electronic and magnetic properties in 2D single layer SiC and in its armchair nanoribbons are also investigated. Some of these vacancy defects and impurities, which are found to influence physical properties and attain magnetic moments, can be used to functionalize SiC honeycomb structures for novel applications.
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    Functionalization of group V monolayers and their compounds: alloying, doping and surface modification
    (2020-11) Kanlı, Muammer
    There has been growing interest during the last decade in two-dimensional (2D) materials due to their important roles in various scientific and technological applications such as detectors, lasers and light emitting diodes. In this thesis we present a theoretical investigation of a couple of such 2D materials from group V monolayers and their compounds. Firstly, ordered alloys of GaxAl1−xN hexagonal monolayer are studied and the effect of Al content on mechanical, electronic, thermal and optical properties are investigated. The optimized lattice constants and band gaps change in accordance to Vegard’s Law. Low barrier energies and favorable substitution of Ga by Al may show feasibility of fabrication. Segregation is also checked with mixing energy calculations. The dynamical stability of alloys is shown by phonon spectrum analysis and MD simulations. GaxAl1−xN alloys give lower in-plane stiffness than h-BN or graphene, but higher Poisson’s ratio than most realized 2D systems. Heat capacity of alloys delivers a decrease with Al content at low temperatures but it converges to the classical limit at high temperatures. The absorption onset of GaxAl1−xN alloys remain in the near UV range and prominent absorption peaks blue-shifts with increasing x in compliance with the variation of the band gap. The considered systems, in regard to their stability and tunable fundamental properties seem to be very promising 2D semiconductors for wide range of applications at reduced scales. Then, the interaction of alkali metal atoms (Li, Na, and K) with single layer and periodic structures of hb-As and sw-As phases are revealed by first-principles methods. Arsenene phases are considered to be used as electrodes (anode) for ion-batteries. Strong alkali-electrode binding and low diffusion energy barriers gives out better cycling stability and faster diffusion, respectively. hb-As shows better storage capacity than sw-As. However, deviations from ordered pattern and decline of formation energy with increasing doping level point out a possible structural transformation. By MD calculations, crystalline to amorphous phase transition is seen even for low concentrations level at ambient temperature. The average open-circuit voltages of 0.68-0.88 V (0.65-0.98 V) with specific capacity up to 715 mAhg−1 (358 mAhg−1) are calculated for single layer (periodic) configurations. Overall, non-crystalline phases are calculated to offer more favorable structures than crystalline configurations and they provide more coherent results when compared with experimental data. The obtained voltage profile together with low diffusion barriers and strong metal-electrode binding suggests arsenene as a promising anode material to be used in for alkali-ion battery applications. Lastly, the formation of dumbbell (DB) geometry upon adsorption of Ga, N adatoms to GaN monolayer is investigated. While Ga-N DBs are unstable, Ga-Ga and N-N DB geometries are predicted to form in an exothermic and spontaneous scheme. Cohesive energy of hexagonal GaN monolayer decreases when a DB is formed on its surface. Electronic structures for Ga-Ga DBs for 2×2, 3×3, 4×4 and 5×5 phases show spinpolarized and degenerate bands mainly contributed by p-orbitals of the atoms in impurity zone. Degenarated bands are not observed for N-N dumbbell for HDP, TDP, 2×2 and 3×3 phases. Upon DB formation, semiconductor GaN monolayer become spin-polarized semiconductor with varying band gap, where this functionalization allows electronic structure to be tuned substantionally. This would be highly desired for nanoscale electronic and optical devices. These Ga-Ga and N-N DB geometries may also be used for the synthesis of layered GaN structures.
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    Magnetism of transition metal nanowires
    (2008) Ataca, Can
    In this thesis we investigated structural, electronic and magnetic properties of 3d (light) transition metal (TM) atomic chains and Cr nanowires using firstprinciples pseudopotential plane wave calculations. Infinite periodic linear, dimerized linear and planar zigzag chain structures, as well as their short segments consisting of finite number of atoms and chromium nanowires have been considered. For most of the infinite periodic chains, neither linear nor dimerized linear structures are favored; to lower their energy the chains undergo a structural transformation to form planar zigzag and dimerized zigzag geometries. Dimerization in both infinite and finite chains are much stronger than the usual Peierls distortion and appear to depend on the number of 3d-electrons. As a result of dimerization, a significant energy lowering occurs which, in turn, influences the stability and physical properties. Metallic linear chain of vanadium becomes half-metallic upon dimerization. Infinite linear chain of scandium also becomes half-metallic upon transformation to the zigzag structure. The end effects influence the geometry, energetics and the magnetic ground state of the finite chains. Structure optimization performed using noncollinear approximation indicates significant differences from the collinear approximation. Variation of the cohesive energy of infinite and finite-size chains with respect to the number of 3d-electrons are found to mimic the bulk behavior pointed out by Friedel. Furthermore, we considered Cr nanowires, which have cross section comprising a few (4,5 - 9,12) atoms. Chromium nanowires are found to be in a local minimum in the Born-Oppenheimer surface and are ferrimagnetic metals. The type of coupling, as for ferromagnetic or antiferromagnetic, between neighboring Cr atoms depends on their interatomic distances. The spin-orbit coupling of finite chains are found to be negligibly small for finite molecules and Cr nanowires.
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    Silicon and carbon based nanowires
    (2004) Tongay, Sefaattin
    Nanowires have been an active field of study since last decade. The reduced dimensionality end size allowing electrons can propagate only in one direction has led to quantization which are rather different from the bulk structure. As a result, nanowires having cross section in the range of Broglie wavelength have shown stepwise electrical and thermal conductance, giant Young modulus, stepwise variation of the cross-section etc. Moreover, the atomic structure of nanowires have exhibited interesting regularities which are not known in two or three dimensions. These novel properties of nanowires have been actively explored since last decade in order to find an application in the rapidly developing field of nanotechnology. In the present thesis, we investigated the atomic and electronic structure of a variety of Si and C atom based very thin nanowires starting from linear chain including pentagonal, hexagonal and tubular structures. We found that the C and Si linear chains form double bonds and have high binding energy. Although bulk carbon in diamond structure is an insulator, carbon linear chain is metal and has twice conductance of the gold chain. We carried out an extensive analysis of stability and conductance of the other wires. Our study reveals that Si and C based nanowires generally show metallic properties in spite of the fact that they are insulator or semiconductor when they are in bulk crystal structure. Metallicity occurs due to change in the character and order of bonds.
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    Size and composition modulated superlattices of silicon based nanowires
    (2008) Cahangirov, Seymur
    Mechanical properties, atomic and energy band structures of bare and hydrogen passivated SinGen nanowire superlattices have been investigated by using firstprinciples pseudopotential plane wave method. Undoped, tetrahedral Si and Ge nanowire segments join pseudomorphically and can form superlattice with atomically sharp interface. Upon heterostructure formation, superlattice electronic states form subbands in momentum space. Band lineups of Si and Ge zones result in multiple quantum wells, where specific states at the band edges and in band continua are confined. The electronic structure of the nanowire superlattice depends on the length and cross section geometry of constituent Si and Ge segments. Also we showed that hydrogen saturated silicon nanowires of different diameters having different band gaps can form stable junctions. Superlattices formed by the periodically repeated junctions of silicon nanowire segments having different lengths and diameters exhibit electronic states which can be confined in regions having either narrow or wide parts of superlattice. A point defect, such as a missing atom or substitutional impurities with localized states near band edges can make modulation doping possible. Since bare Si and Ge nanowires are metallic and the band gaps of hydrogenated ones varies with the diameter, these superlattices offer numerous options for multiple quantum well devices with their leads made from the constituent metallic nanowires. Finally, we have considered the junction between bare and hydrogenated nanowires to realise metalsemiconductor heterostructure. We have treated this heterostructure within the supercell geometry and deduced the formation of Schottky barrier. We have shown that Si and Ge nanowires can bring about a novel concept in nanocircuit, where interconnects, devices etc are produced on a single rode.
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    Size modulation and defects in graphene based ribbons : magnetism and charge confinement
    (2008) Topsakal, Mehmet
    In this thesis, we investigated the effects of vacancy and heterojunction formation on electronic and magnetic properties of graphene nanoribbons (GNRs) by using first principles pseudopotential plane wave method within Density Functional Theory. Graphene based materials are expected to be very important in future technology. Through understanding of all the factors which influence their physical properties is essential. We have shown that electronic and magnetic properties of graphene nanoribbons can be affected by defect-induced itinerant states. The band gaps of armchair nanoribbons can be modified by hydrogen saturated holes. Defects due to periodically repeating vacancies or divacancies induce metallization, as well as magnetization in non-magnetic semiconducting nanoribbons due to the spin-polarization of local defect states. Antiferromagnetic ground state of semiconducting zigzag ribbons can change to ferrimagnetic state upon creation of vacancy defects, which reconstruct and interact with edge states. Even more remarkable is that all these effects of vacancy defects are found to depend on their geometry and position relative to edges. We also predicted that periodically repeated junctions of graphene ribbons of different widths form multiple quantum well structures having confined states. These quantum structures are unique, since both constituents of heterostructures are of the same material. The width as well as the band gap, for specific superlattices are modulated in direct space. Orientation of constituent nanoribbons, their widths, lengths and the symmetry of the junction are some of the crucial structural parameters to engineer electronic properties of these systems. Our further studies on nanoribbons and nanoribbon superlattices showed the strong dependence of band gaps and magnetic moments on applied uniaxial stress. This thesis presents an extensive study of size modulation and defect formation on graphene nanoribbons.
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    Spintronic properties of carbon and silicon based nanostructures
    (2007) Durgun, Engin
    In this thesis, nanostructures which may display novel spintronic behaviors are revealed and their properties are investigated by using first-principles methods. We have concentrated on three different systems, namely carbon linear chains, singe-wall carbon nanotubes and silicon nanowires. First of all, an extensive study of the electronic, magnetic and transport properties of finite and infiniteperiodic atomic chains composed of carbon atoms and 3d transition metal (TM) atoms are carried out. Finite-size, linear molecules made of carbon atomic chains caped with TM atoms, i.e. TM-Cn-TM structures are found to be stable and exhibit interesting magnetoresistive properties. The indirect exchange interaction of the two TM atoms through a spacer of n carbon atoms determines the type of the magnetic ground state of these structures. The n-dependent variations of the ground state between ferromagnetic (F) and antiferromagnetic (AF) spin configurations exhibit several distinct features, including regular alternations and irregular forms. We present a simple analytical model that can successfully simulate these variations, and the induced magnetic moments on the carbon atoms. The periodically repeated TM-Cn atomic chains exhibit half-metallic properties with perfect spin polarization at the Fermi level (EF ). When connected to appropriate electrodes the TM-Cn-TM atomic chains act as molecular spin-valves in their F states due to the large ratios of the conductance values for each spin type. Secondly, a systematic study of the electronic and magnetic properties of TM atomic chains adsorbed on the zigzag single-wall carbon nanotubes (SWNTs) is presented. The adsorption on the external and internal wall of SWNT is considered and the effect of the TM coverage and geometry on the binding energy and the spin polarization at EF is examined. All those adsorbed chains studied have F ground state, but only their specific types and geometries demonstrated high spin polarization near EF . Their magnetic moment and binding energy in the ground state display interesting variation with the number of d−electrons of the TM atom. Spin-dependent electronic structure becomes discretized when TM atoms are adsorbed on finite segments of SWNTs. Once coupled with non-magnetic metal electrodes, these magnetic needles or nanomagnets can perform as spindependent resonant tunnelling devices. The electronic and magnetic properties of these nanomagnets can be engineered depending on the type and decoration of adsorbed TM atom as well as the size and symmetry of the tube. Finally, bare, hydrogen terminated and TM adsorbed Silicon nanowires (SiNW) oriented along [001] direction are investigated. An extensive analysis on the atomic structure, stability, elastic and electronic properties of bare and hydrogen terminated SiNWs is performed. It is then predicted that specific TM adsorbed SiNWs have a half-metallic ground state even above room temperature. At high coverage of TM atoms, ferromagnetic SiNWs become metallic for both spin-directions with high magnetic moment and may have also significant spin-polarization at EF . The spin-dependent electronic properties can be engineered by changing the type of adsorbed TM atoms, as well as the diameter of the nanowire. Most of these systems studied in this thesis appear to be stable at room temperature and promising for spintronic devices which can operate at ambient conditions. Therefore, we believe that present results are not only of academic interest, but also can initiate new research on spintronic applications of nanostructures.
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    A study of adsorption of single atoms on carbon nanotubes
    (2003) Durgun, Engin
    The adsorption of individual atoms on the semiconducting and metallic singlewall carbon nanotubes (SWNT) have been investigated by using first-principles pseudopotential plane wave method within Density Functional Theory. The stable adsorption geometry and binding energy have been determined for a large number of foreign atoms ranging from alkali and simple metals to the transition metals and group IV elements. We have found that the character of the bonding and associated physical properties strongly depend on the type of adsorbed atoms, in particular on their valence electron structure. Our results indicate that the properties of SWNTs can be modified by the adsorbed foreign atoms. While the atoms of good conducting metals, such as Zn, Cu, Ag and Au, form very weak bonds, transition metal atoms, such as Ti, Sc, Nb and Ta, and group IV elements C and Si are adsorbed with relatively high binding energy. Owing to the curvature effect, these binding energies are larger than the binding energies of the same atoms on the graphite surface. We have showed that the adatom carbon can form strong and directional bonds between two SWNTs so that the tubes are connected. These connects can be used to produce nanotube networks or grids. Most of the adsorbed transition metal atoms excluding Ni, Pd and Pt have a magnetic ground state with a significant magnetic moment. Our results suggest that carbon nanotubes can be functionalized in different ways by their coverage with different atoms, showing interesting applications such as one-dimensional nanomagnets or nanoconductors and conducting connects etc.

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