Browsing by Subject "Wide-band-gap semiconductor"
Now showing 1 - 1 of 1
- Results Per Page
- Sort Options
Item Open Access Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors(IEEE, 2009-10) Bütün, Serkan; Gökkavas, Mutlu; Yu, HongBo; Strupinski, Vlodek; Özbay, EkmelPhotodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.