Browsing by Subject "Voltage scaling"
Now showing 1 - 3 of 3
Results Per Page
Sort Options
Item Open Access Compiler-directed energy reduction using dynamic voltage scaling and voltage islands for embedded systems(Institute of Electrical and Electronics Engineers, 2013) Ozturk, O.; Kandemir, M.; Chen G.Addressing power and energy consumption related issues early in the system design flow ensures good design and minimizes iterations for faster turnaround time. In particular, optimizations at software level, e.g., those supported by compilers, are very important for minimizing energy consumption of embedded applications. Recent research demonstrates that voltage islands provide the flexibility to reduce power by selectively shutting down the different regions of the chip and/or running the select parts of the chip at different voltage/frequency levels. As against most of the prior work on voltage islands that mainly focused on the architecture design and IP placement related issues, this paper studies the necessary software compiler support for voltage islands. Specifically, we focus on an embedded multiprocessor architecture that supports both voltage islands and control domains within these islands, and determine how an optimizing compiler can automatically map an embedded application onto this architecture. Such an automated support is critical since it is unrealistic to expect an application programmer to reach a good mapping correlating multiple factors such as performance and energy at the same time. Our experiments with the proposed compiler support show that our approach is very effective in reducing energy consumption. The experiments also show that the energy savings we achieve are consistent across a wide range of values of our major simulation parameters. © 1968-2012 IEEE.Item Open Access NS-SRAM: neighborhood solidarity SRAM for reliability enhancement of SRAM memories(IEEE, 2016-08-09) Alouani, I.; Ahangari, Hamzeh; Öztürk, Özcan; Niar, S.Technology shift and voltage scaling increased the susceptibility of Static Random Access Memories (SRAMs) to errors dramatically. In this paper, we present NS-SRAM, for Neighborhood Solidarity SRAM, a new technique to enhance error resilience of SRAMs by exploiting the adjacent memory bit data. Bit cells of a memory line are paired together in circuit level to mutually increase the static noise margin and critical charge of a cell. Unlike existing techniques, NS-SRAM aims to enhance both Bit Error Rate (BER) and Soft Error rate (SER) at the same time. Due to auto-adaptive joiners, each of the adjacent cells' nodes is connected to its counterpart in the neighbor bit. NS-SRAM enhances read-stability by increasing critical Read Static Noise Margin (RSNM), thereby decreasing faults when circuit operates under voltage scaling. It also increases hold-stability and critical charge to mitigate soft-errors. By the proposed technique, reliability of SRAM based structures such as cache memories and register files can drastically be improved with comparable area overhead to existing hardening techniques. Moreover it does not require any extra-memory, does not impact the memory effective size, and has no negative impact on performance. © 2016 IEEE.Item Open Access Two-nanometer laser synthesized Si-nanoparticles for low power memory applications(Springer International Publishing, 2016) El-Atab, N.; Okyay, Ali Kemal; Nayfeh, A.Current flash memory devices are expected to face two major challenges in the near future: density and voltage scaling. The density of the memory is related to the gate length scaling which is constrained by the gate stack, namely, the tunnel oxide thickness. In fact, the gate length is required to be commensurate with the gate stack in order to maintain a good gate control and to avoid short channel effects. However, in conventional flash memories, the tunnel oxide thickness has a lower limit of 6-7 nm (depending on NOR or NAND structure) in order to avoid back-tunneling and thus leakage of charges which destroys the necessary retention characteristic of the memory (>10 years). The second problem which needs to be solved is the high program and erase operating voltages. Once again, the limitation to operating voltage scaling is the inability to reduce gate stack thickness. Therefore, it is imperative to find novel structures and materials to be incorporated in the memory cells which would allow tunnel oxide and voltage scaling. In this study, MOSFET- and MOSCAP-based memory devices are investigated along with the use of 2-nm silicon nanoparticles (Si-NPs) for charge storage. Atomic layer deposition is used to deposit the active layer of the memory and the spin coating is performed to deliver the Si-nanoparticles across the sample.