Browsing by Subject "Visible photoluminescence"

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    Crystallization of Ge in SiO2 matrix by femtosecond laser processing
    (American Vacuum Society, 2012-01-19) Salihoglu, O.; Kürüm, U.; Yaglioglu, H. G.; Elmali, A.; Aydınlı, Atilla
    Germanium nanocrystals embedded in a siliconoxide matrix has been fabricated by single femtosecond laser pulse irradiation of germanium doped SiO2 thin films deposited with plasma enhanced chemical vapor deposition. SEM and AFM are used to analyze surface modification induced by laser irradiation. Crystallization of Ge in the oxide matrix is monitored with the optic phonon at 300 cm(-1) as a function of laser fluence. Both the position the linewidth of the phonon provides clear signature for crystallization of Ge. In PL experiments, strong luminescence around 600 nm has been observed.
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    Visible photoluminescence from SiOx films grown by low temperature plasma enhanced chemical vapor deposition
    (Pergamon Press, 1995) Timofeev, F. N.; Aydınlı, Atilla; Ellialtioglu, R.; Turkoglu, K.; Gure, M.; Mikhailov, V. N.; Lavrova, O. A.
    a-SiOx films of varying stoichiometry have been prepared by low temperature plasma enhanced chemical vapor deposition. The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows exhibited much stronger PL after annealing. Peak PL energies ranging from the ultraviolet to the near infrared have been observed. PL, infrared and X-ray diffraction on selected samples indicate formation of Si clusters in the films. The effects of annealing on the PL properties of the films have been found to depend on initial stoichiometry of the films. © 1995.