Browsing by Subject "Ultraviolet"
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Item Open Access High-performance AlxGA1-xN-Based UV photodetectors for visible/solar-blind applications(2004) Bıyıklı, NecmiHigh-performance detection of ultraviolet (UV) radiation is of great importance for a wide range of applications including flame sensing, environmental (ozone layer) monitoring, detection of biological/chemical agents, missile early warning systems, and secure intersatellite communication systems. These applications require high-performance UV photodetectors with low dark current, high responsivity, high detectivity, and fast time response. The widebandgap AlxGa1−xN ternary alloy is well-suited as a photodetector material for operation in the wavelength range of 200 nm to 365 nm. Its outstanding material properties (direct bandgap, tunable cut-off, allows heterostructures, intrinsically solar-blind) make AlxGa1−xN suitable for a variety of harsh environments. If properly constructed, AlxGa1−xN-based photodetectors could offer significant advantages over the older photomultiplier tube (PMT) technology in terms of size, cost, robustness, complexity, dark current, bandwidth, and solar-blind operation. The motivation behind this work is the need for high-performance, solid-state UV photodetectors that can be cost-effectively manufactured into high-density arrays. We have designed, fabricated, and characterized several visible/solar-blind AlxGa1−xN photodiode samples. With solar-blind AlxGa1−xN photodiode samples, we achieved excellent device performance in almost all aspects. Very low dark currents were measured with heterostructure AlxGa1−xN Schottky and p-i-n samples. The extremely low leakage characteristics resulted in record detectivity and noise performance. Detectivity performance comparable to PMT detectivity was achieved. True solar-blind operation (sub-280 nm cut-off) with high visible rejection was demonstrated. In addition, we improved the bandwidth performance of AlxGa1−xN-based solar-blind photodetectors by over an order of magnitude. Solar-blind Schottky, p-i-n, and metal-semiconductor-metal photodiode samples exhibited very fast pulse response with multi-GHz bandwidths.Item Open Access High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures(IEEE, 2004) Özbay, Ekmel; Bıyıklı, Necmi; Kimukin, I.; Kartaloglu, T.; Tut, T.; Aytür, O.Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal (MSM) photodiodes. The solar-blind photodiode samples were fabricated using a microwave compatible fabrication process. The resulting devices exhibited extremely low dark currents. Below 3 fA, leakage currents at 6-V reverse bias were measured on p-i-n samples. The excellent current-voltage (I-V) characteristics led to a detectivity performance of 4.9×1014 cmHz1/2W -1. The MSM devices exhibited photoconductive gain, while Schottky and p-i-n samples displayed 0.09 and 0.11 A/W peak responsivity values at 267 and 261 nm, respectively. A visible rejection of 2×104 was achieved with Schottky samples. High-speed measurements at 267 nm resulted in fast pulse responses with greater than gigahertz bandwidths. The fastest devices were MSM photodiodes with a maximum 3-dB bandwidth of 5.4 GHz.Item Open Access High-speed visible-blind GaN-based ITO-Schottky photodiodes(SPIE, 2002) Bıyıklı, Necmi; Kimukin, İbrahim; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, EkmelIn this paper we present our efforts on the design, fabrication and characterization of high-speed, visible-blind, GaN-based ultra-violet (UV) photodiodes using indium-tin-oxide (ITO) Schottky contacts. ITO is known as a transparent conducting material for the visible and near infrared part of the electromagnetic spectrum. We have investigated the optical properties of thin ITO films in the ultraviolet spectrum The transmission and reflection measurements showed that thin ITO films had better transparencies than thin Au films for wavelengths greater than 280 mn. Using a microwave compatible fabrication process, we have fabricated Au and ITO based Schottky photediodes on n-/n+ GaN epitaxial layers. We have made current-voltage (I-V), spectral quantum efficiency, and high-speed characterization of the fabricated devices. I-V characterization showed us that the Au-Schottky samples had better electrical characteristics mainly due to the larger Schottky barrier. However, due to the better optical transparency, ITO-Schottky devices exhibited higher quantum efficiencies compared to Au-Schottky devices. ITO-Schottky photodiodes with ∼80 nm thick ITO films resulted in a maximum quantum efficiency of 47%, whereas Au-Schottky photodiode samples with ∼10 nm thick Au films displayed a maximum efficiency of 27% in the visible-blind spectrum. UV/visible rejection ratios over three orders of magnitude were obtained for both samples. High-frequency characterization of the devices was performed via pulse-response measurements at 360 nm. ITO-Schottky photodiodes showed excellent high-speed characteristics with rise times as small as 12 psec and RC-time constant limited pulse-widths of 60 psec.Item Open Access Investigation of binding properties of dicationic styrylimidazo[1,2-a]pyridinium dyes to human serum albumin by spectroscopic techniques(John Wiley and Sons Ltd, 2017) Özdemir, A.; Gökoğlu, E.; Yılmaz, Esra; Yalçın, E.; Gökoğlu, E.; Seferoğlu, Z.; Tekinay, T.The binding interaction between two dicationic styrylimidazo[1,2-a]pyridinium dyes and human serum albumin (HSA) was investigated at physiological conditions using fluorescence, UV–vis absorption, and circular dichroism (CD) spectroscopies. Analysis of the fluorescence titration data at different temperatures suggested that the fluorescence quenching mechanism of HSA by these dyes was static. The calculated thermodynamic parameters (ΔG°, ΔH° and ΔS°) indicated that hydrogen bonding and van der Waals forces played a major role in the formation of the dye–HSA complex. Binding distances (r) between dyes and HSA were calculated according to Förster's non-radiative energy transfer theory. Studies of conformational changes of HSA using CD measurements indicate that the α-helical content of the protein decreased upon binding of the dyes.Item Open Access Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures(SPIE, 2014) Tekcan, B.; Ozgit Akgun, C.; Bolat, S.; Bıyıklı, Necmi; Okyay, Ali KemalProof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices. © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE).