Browsing by Subject "Turn-on voltages"

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    Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
    (AIP Publishing, 2013) El-Atab, N.; Alqatari, S.; Oruc F.B.; Souier, T.; Chiesa, M.; Okyay, Ali Kemal; Nayfeh, A.
    A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively. © 2013 © 2013 Author(s).
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    Implementation of graphene multilayer electrodes in quantum dot light-emitting devices
    (Springer Verlag, 2015) Wolff, S.; Jansen, D.; Terlinden H.; Kelestemur, Y.; Mertin W.; Demir, Hilmi Volkan; Bacher G.; Nannen, E.
    Graphene is a highly attractive candidate for implementation as electrodes in next-generation large-area optoelectronic devices thanks to its high electrical conductivity and high optical transparency. In this study, we show all-solution-processed quantum dot-based light-emitting devices (QD-LEDs) using graphene mono- and multilayers as transparent electrodes. Here, the effect of the number of graphene layers (up to three) on the QD-LEDs performance was studied. While the implementation of a second graphene layer was found to reduce the turn-on voltage from 2.6 to 1.8 V, a third graphene layer was observed to increase the turn-on voltage again, which is attributed to an increased roughness of the graphene layer stack. © 2015, Springer-Verlag Berlin Heidelberg.