Browsing by Subject "Thin-films"
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Item Open Access Crystallization of Ge in SiO2 matrix by femtosecond laser processing(American Vacuum Society, 2012-01-19) Salihoglu, O.; Kürüm, U.; Yaglioglu, H. G.; Elmali, A.; Aydınlı, AtillaGermanium nanocrystals embedded in a siliconoxide matrix has been fabricated by single femtosecond laser pulse irradiation of germanium doped SiO2 thin films deposited with plasma enhanced chemical vapor deposition. SEM and AFM are used to analyze surface modification induced by laser irradiation. Crystallization of Ge in the oxide matrix is monitored with the optic phonon at 300 cm(-1) as a function of laser fluence. Both the position the linewidth of the phonon provides clear signature for crystallization of Ge. In PL experiments, strong luminescence around 600 nm has been observed.Item Open Access Field-effect-assisted photoconductivity in PbS films deposited on silicon dioxide(American Institute of Physics, 2002-05-01) Pintilie, L.; Pentia, E.; Matei, I.; Pintilie, I.; Özbay, EkmelLead sulfide (PbS) thin films were deposited from a chemical bath onto SiO2/Si (n-type) substrates. Pseudo-metal-oxide-semiconductor devices were obtained by evaporating source and drain gold electrodes on a PbS surface and aluminum gate electrode on a Si substrate. Field-effect-assisted photoconductivity in the PbS layer was investigated at room temperature, in the 800-2700-nm-wavelength domain for different values and polarities of the drain and gate voltages. The best results were obtained for a positive gate, when both semiconductors are in depletion. An enhancement of about 25% of the photoconductive signal is obtained compared with the case when the gate electrode is absent or is not used. A simple model is proposed that explains the behavior of the dark current and photoconductive signal in PbS film with changing the gate voltage. (C) 2002 American Institute of Physics.Item Open Access Free-standing ZnO-CuO composite nanowire array films and their gas sensing properties(IOP Publishing, 2011-07-19) Wang, J. X.; Sun, X. W.; Yang, Y.; Kyaw, A. K. K.; Huang, X. Y.; Yin, J. Z.; Wei, J.; Demir, Hilmi VolkanA modified hydrothermal method was developed to synthesize ZnO-CuO composite nanostructures. A free-standing film made of ZnO-CuO nanostructures was assembled on the surface of the hydrothermal solution with a smooth surface on one side and a spherical surface on the other side. The structure, growth mechanism and the optical properties of the composite nanostructures were studied. Structural characterizations indicate that the composite nanostructure mainly consisted of two single-crystal phases of CuO and ZnO. The sensitivity for CO gas detection was significantly improved for the composite CuO-ZnO nanostructure film. This method offers a possible route for the fabrication of free-standing nanostructure films of different functional composite oxides.Item Open Access Low-loss as-grown germanosilicate layers for optical waveguides(A I P Publishing LLC, 2003) Ay, F.; Aydınlı, Atilla; Agan, S.We report on systematic growth and characterization of low-loss germanosilicate layers for use in optical waveguide technology. The films were deposited by plasma-enhanced chemical vapor deposition technique using silane, germane, and nitrous oxide as precursor gases. Fourier transform infrared spectroscopy was used to monitor the compositional properties of the samples. It was found that addition of germane leads to decreasing of N-H- and O-H-related bonds. The propagation loss values of the planar waveguides were correlated with the decrease in the hydrogen-related bonds of the as-deposited waveguides and resulted in very low values, eliminating the need for high-temperature annealing as is usually done.Item Open Access Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma(Wiley-Blackwell Publishing, Inc., 2014) Haider A.; Ozgit Akgun, C.; Goldenberg, E.; Okyay, Ali Kemal; Bıyıklı, NecmiHexagonal boron nitride (hBN) thin films were deposited on silicon and quartz substrates using sequential exposures of triethylboron and N 2 /H 2 plasma in a hollow-cathode plasma- assisted atomic layer deposition reactor at low temperatures ( ≤ 450 ° C). A non-saturating film deposition rate was observed for substrate temperatures above 250 ° C. BN films were charac- terized for their chemical composition, crystallinity, surface morphology, and optical properties. X-ray photoelectron spec- troscopy (XPS) depicted the peaks of boron, nitrogen, carbon, and oxygen at the film surface. B 1s and N 1s high-resolution XPS spectra confirmed the presence of BN with peaks located at 190.8 and 398.3 eV, respectively. As deposited films were polycrystalline, single-phase hBN irrespective of the deposition temperature. Absorption spectra exhibited an optical band edge at ~ 5.25 eV and an optical transmittance greater than 90% in the visible region of the spectrum. Refractive index of the hBN film deposited at 450 ° C was 1.60 at 550 nm, which increased to 1.64 after postdeposition annealing at 800 ° C for 30 min. These results represent the first demonstration of hBN deposi- tion using low-temperature hollow-cathode plasma-assisted sequential deposition technique. © 2014 The American Ceramic Society.Item Open Access Mechanical, electronic, and optical properties of Bi2S3 and Bi2Se3 compounds: first principle investigations(Springer Berlin Heidelberg, 2014) Koc, H.; Ozisik, H.; Deligoz, E.; Mamedov, A. M.; Özbay, EkmelThe structural, mechanical, electronic, and optical properties of orthorhombic Bi2S3 and Bi2Se3 compounds have been investigated by means of first principles calculations. The calculated lattice parameters and internal coordinates are in very good agreement with the experimental findings. The elastic constants are obtained, then the secondary results such as bulk modulus, shear modulus, Young's modulus, Poisson's ratio, anisotropy factor, and Debye temperature of polycrystalline aggregates are derived, and the relevant mechanical properties are also discussed. Furthermore, the band structures and optical properties such as real and imaginary parts of dielectric functions, energy-loss function, the effective number of valance electrons, and the effective optical dielectric constant have been computed. We also calculated some non-linearities for Bi2S3 and Bi2Se3 (tensors of elasto-optical coefficients) under pressureItem Open Access Resonant nonradiative energy transfer in CdSe/ZnS core/shell nanocrystal solids enhances hybrid white light emitting diodes(Optical Society of America, 2008) Nizamoglu, S.; Demir, Hilmi VolkanWe propose and demonstrate hybrid white light emitting diodes enhanced with resonant nonradiative energy transfer in CdSe/ZnS core/shell nanocrystal solids integrated on near-UV InGaN/GaN LEDs. We observe a relative quantum efficiency enhancement of 13.2 percent for the acceptor nanocrystals in the energy gradient mixed assembly, compared to the monodisperse phase. This enhancement is attributed to the ability to recycle trapped excitons into nanocrystals using nonradiative energy transfer. We present the time-resolved photoluminescence of these nanocrystal solids to reveal the kinetics of their energy transfer and their steady-state photoluminescence to exhibit the resulting quantum efficiency enhancement.