Browsing by Subject "Thin film transistor"

Filter results by typing the first few letters
Now showing 1 - 2 of 2
  • Thumbnail Image
    ItemOpen Access
    Electronic and optical properties of atomic layer-deposited ZnO and TiO2
    (Springer New York LLC, 2018) Ates, H.; Bolat, S.; Oruc, F.; Okyay, Ali Kemal
    Metal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO2 are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO2 as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO2 affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.
  • Thumbnail Image
    ItemOpen Access
    ZnO based optical modulator in the visible wavelengths
    (SPIE, 2013) Okyay, Ali Kemal; Aygun, Levent E.; Oruç, Feyza B.
    In order to demonstrate tunable absorption characteristics of ZnO, photodetection properties of ZnO based thin-film transistors are investigated. By controlling the occupancy of the trap states, the optical absorption coefficient of ZnO in the visible light spectrum is actively tuned with gate bias. An order of magnitude change of absorption coefficient is achieved. An optical modulator is proposed exploiting such tunable absorption mechanism. © 2013 SPIE.