Browsing by Subject "Thin Film Transistors"

Filter results by typing the first few letters
Now showing 1 - 1 of 1
  • Thumbnail Image
    ItemOpen Access
    TiO2 thin film transistor by atomic layer deposition
    (SPIE, 2013) Okyay, Ali Kemal; Oruç, Feyza B.; Çimen, Furkan; Aygün, Levent E.
    In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475°C and observed that their threshold voltage value is 6.5V, subthreshold slope is 0.35 V/dec, Ion/Ioff ratios 2.5×106 and mobility value is 0.672 cm2/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO 2 has band to band absorption mechanism. © 2013 SPIE.